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Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Appl. Phys. Lett. 95, 202102 (2009); doi:10.1063/1.3259416

Published 17 November 2009

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E. P. Nordberg,1,2 H. L. Stalford,1,3 R. Young,1 G. A. Ten Eyck,1 K. Eng,1 L. A. Tracy,1 K. D. Childs,1 J. R. Wendt,1 R. K. Grubbs,1 J. Stevens,1 M. P. Lilly,4 M. A. Eriksson,2 and M. S. Carroll1
1Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
2University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
3University of Oklahoma, Norman, Oklahoma 73019, USA
4Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double-top-gated metal-oxide-semiconductor system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a three-dimensional capacitance model of the integrated sensor and quantum dot system. ©2009 American Institute of Physics
History: Received 18 September 2009; accepted 14 October 2009; published 17 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/202102/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 73.63.Kv
    Quantum dots (electronic transport)
  • YEAR: 2009

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0003-6951 (print)   1077-3118 (online)
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