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Observation of space-charge-limited current due to charge generation at interface of molybdenum dioxide and organic layer

Appl. Phys. Lett. 95, 203306 (2009); doi:10.1063/1.3267082

Published 20 November 2009

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Toshinori Matsushima and Hideyuki Murata
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Current density-voltage characteristics of hole-only devices are influenced by thicknesses of molybdenum dioxide (MoO2) and molybdenum trioxide (MoO3) as buffer layers. A space-charge-limited current of N,N[prime]-diphenyl-N,N[prime]-bis(1-naphthyl)-1,1[prime]-biphenyl-4,4[prime]-diamine (alpha-NPD) is observed in a wide range of MoO2 thicknesses from 0.25 to 10 nm and at a specific MoO3 thickness of 0.75 nm. Charge transfer characteristics at interfaces of MoO2/alpha-NPD and MoO3/alpha-NPD are investigated from changes in fluorescence intensity of alpha-NPD. Reasons of the improved device characteristics are discussed in terms of interfacial charge generation composed of charged transfer and charge separation. ©2009 American Institute of Physics
History: Received 1 September 2009; accepted 2 November 2009; published 20 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/203306/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.-a
    Thin film structure and morphology
  • 68.65.Ac
    Multilayers (structure and nonelectronic properties)
  • 78.66.-w
    Optical properties of specific thin films
  • 78.55.-m
    Photoluminescence, properties and materials (condensed matter)
  • YEAR: 2010

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (15)
View in Separate Window/Tab
  1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
  2. H. Aziz, Z. D. Popovic, N. -X. Hu, A. -M. Hor, and G. Xu, Sciences (N.Y.) 283, 1900 (1999).
  3. T. Matsushima, G. -H. Jin, and H. Murata, J. Appl. Phys. 104, 054501 (2008).
  4. T. Matsushima, Y. Kinoshita, and H. Murata, Appl. Phys. Lett. 91, 253504 (2007).
  5. H. Lee, S. W. Cho, K. Han, P. E. Jeon, C. -N. Whang, K. Jeong, K. Cho, and Y. Yi, Appl. Phys. Lett. 93, 043308 (2008).
  6. M. Kröger, S. Hamwi, J. Meyer, T. Riedl, W. Kowalsky, and A. Kahn, Org. Electron. 10, 932 (2009).
  7. P. N. Murgatroyd, J. Phys. D 3, 151 (1970).
  8. W. Chandra, L. K. Ang, K. L. Pey, and C. M. Ng, Appl. Phys. Lett. 90, 153505 (2007). [ISI]
  9. S. Naka, H. Okada, H. Onnagawa, Y. Yamaguchi, and T. Tsutsui, Synth. Met. 111, 331 (2000). [Inspec]
  10. T. Y. Chu and O. K. Song, Appl. Phys. Lett. 90, 203512 (2007). [ISI]
  11. D. -S. Leem, H. -D. Park, J. -W. Kang, J. -H. Lee, J. W. Kim, and J. -J. Kim, Appl. Phys. Lett. 91, 011113 (2007). [ISI]
  12. D. -D. Zhang, J. Feng, Y. -F. Liu, Y. -Q. Zhong, Y. Bai, Y. Jin, G. -H. Xie, Q. Xue, Y. Zhao, S. -Y. Liu, and H. -B. Sun, Appl. Phys. Lett. 94, 223306 (2009).
  13. C. -C. Chang, M. -T. Hsieh, J. -F. Chen, S. -W. Hwang, and C. H. Chen, Appl. Phys. Lett. 89, 253504 (2006).
  14. T. Oyamada, C. Maeda, H. Sasabe, and C. Adachi, Jpn. J. Appl. Phys., Part 2 42, L1535 (2003). [ISI]
  15. J. Kido and T. Matsumoto, Appl. Phys. Lett. 73, 2866 (1998).






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