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Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

Appl. Phys. Lett. 95, 203505 (2009); doi:10.1063/1.3263733

Published 17 November 2009

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Edward D. Herderick, Kongara M. Reddy, Rachel N. Sample, Thomas I. Draskovic, and Nitin P. Padture
Department of Materials Science and Engineering, Center for Emergent Materials, The Ohio State University, Columbus, Ohio 43210, USA
Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au–NiO–Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects. ©2009 American Institute of Physics
History: Received 29 September 2009; accepted 23 October 2009; published 17 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/203505/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Rw
    Electrical properties of metal-insulator-metal structures
  • 73.63.Rt
    Nanoscale contacts (electronic transport)
  • 66.30.Qa
    Electromigration in solids
  • 61.72.jd
    Vacancies (point defects)
  • YEAR: 2010

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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