Stain Etching with Fe(III), V(V), and Ce(IV) to Form Microporous Silicon

Electrochem. Solid-State Lett., Volume 12, Issue 4, pp. D22-D26 (2009)

(Published 29 January 2009)

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ABSTRACT

REFERENCES (13)

CITING ARTICLES

Margaret E. Dudley and Kurt W. Kolasinski
Department of Chemistry, West Chester University, West Chester, Pennsylvania 19383, USA

Stainetchants made from (HF+V₂O₅) or (HF+FeCl₃·6H₂O+HCl or H₂SO₄) exhibited virtuallyno initiation time before the formation of porous silicon. Etchingwith Fe(III) solutions for extended periods resulted in a uniquedual layer structure that can reach a thickness >10 µm andexhibited not only red-orange but also green photoluminescence (PL). Etchingwith (CeF₄+H₂SO₄) produced extremely uniform films. Visible PL was observedimmediately after etching except for those films produced with (CeF₄+H₂SO₄),which required several days of air exposure before bright androbust PL developed.

©2009 The Electrochemical Society

History:	Submitted 29 October 2008; revised 31 December 2008; published 29 January 2009
Permalink:	http://dx.doi.org/10.1149/1.3074333

KEYWORDS and PACS

Keywords

cerium compounds, elemental semiconductors, etching, hydrogen compounds, iron compounds, photoluminescence, porous semiconductors, semiconductor thin films, silicon, vanadium compounds

PACS

81.65.Cf
Surface cleaning, etching, patterning
61.43.Gt
Structure of powders and porous materials
78.66.Db
Optical properties of elemental semiconductors and insulators (thin films)
78.55.Ap
Photoluminescence in elemental semiconductors
YEAR: 2009