Low Temperature Wafer Bonding by Copper Nanorod Array

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A vast array of Cu nanorods with a diameter of 10–20  nm grown by an oblique angle deposition technique was utilized as an adhesive layer for bonding 200  mm Si wafers at low temperatures. The focus ion beam/scanning electron microscope images illustrate that the Cu nanorod array underwent coalescence readily upon a bonding temperature at 200°C. Upon 400°C, a dense Cu bonding layer with homogeneous structure was achieved. A fully dense bonding structure was also obtained upon a lower bonding temperature at 300°C followed by a postannealing at 400°C in a reducing ambient.

©2009 The Electrochemical Society