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On the Dependence of the Switching Time of Barium Titanate Crystals on Their Thickness

J. Appl. Phys. 30, 1663 (1959); doi:10.1063/1.1735032

Issue Date: November 1959

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M. E. Drougard and R. Landauer
Research Laboratory, International Business Machines Corporation, Poughkeepsie, New York
The dependence of switching rate on the crystal thickness has been measured by Merz and explained by him in terms of a surface layer which has a low dielectric constant, and is about 10−4 cm thick. While not explicitly stated in Merz' original arguments, the layer must have a reversible polarization. If a layer without a reversible polarization is assumed, instead, and the discontinuity of the normal component of polarization at the interface between the layer and the bulk is taken into account, then a much thinner layer (~1 atomic thickness) will explain the thickness dependence. This layer can be taken to be very lossy, so that it has a relaxation time (for the disappearance of electric fields) short compared to the switching time, and yet the layer will still be completely effective in slowing down domain wall motion. ©1959 The American Institute of Physics
History: Received March 30, 1959
Permalink: http://link.aip.org/link/?JAPIAU/30/1663/1
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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (15)

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  1. W. J. Merz, J. Appl. Phys. 27, 938 (1956).
  2. I. Ames (private communication).
  3. Landauer, Young, and Drougard, J. Appl. Phys. 27, 752 (1956).
  4. Drougard, Funk, and Young, J. Appl. Phys. 25, 1166 (1954).
  5. D. P. Cameron, IBM J. Research Develop. 1, 2 (1957).
  6. A. G. Chynoweth, Phys. Rev. 102, 705 (1956).
  7. M. E. Drougard and H. Schlosser (to be published).
  8. R. Landauer, J. Appl. Phys. 28, 227 (1957).
  9. R. C. Miller and A. Savage, Phys. Rev. 112, 755 (1958).
  10. F. C. Frank (private communication).
  11. We are indebted to P. Bakshi for pointing out that the integrals involved could be expressed in closed form.
  12. Jahnke and Emde, Tables of Functions (Dover Publications, Inc., New York, 1945), p. 1.
  13. Again assuming that the crystal is thick enough so that the field between the interface and the electrode is essentially unaffected by the existence of the far electrode.
  14. R. C. Miller (private communication).
  15. C. F. Pulvari and W. Kuebler, J. Appl. Phys. 29, 1742 (1958).

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