Diffusion and the power spectral density and correlation function of velocity fluctuation for electrons in Si and GaAs by Monte Carlo methods
In Sec. II of this work, we briefly recall the various ways of defining the diffusion coefficient D and discuss their identity in high-field conditions and in very high frequency operations. In Sec. I...
In Sec. II of this work, we briefly recall the various ways of defining the diffusion coefficient D and discuss their identity in high-field conditions and in very high frequency operations. In Sec. I...
Current transport in GaAs Schottky barrier diodes subject to high neutron fluence
The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (75%) carrier removal. A significant change is seen in th...
The electrical characteristics of GaAs Schottky barrier diodes are investigated after fast-neutron irradiation at fluences causing appreciable (75%) carrier removal. A significant change is seen in th...
Static compression of silicon in the [100] and in the [111] directions
J. Appl. Phys. 51, 1072 (1980); doi:10.1063/1.327714
Issue Date: February 1980
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High pressures were generated using a diamond indentor technique. The phase transition in silicon loaded in the [100] direction and silicon loaded in the [111] direction under high pressure was studied. From the behavior of electrical resistance of silicon loaded in the [100] direction, it was found that it becomes metallic at about 12.0 GPa in agreement with the previously reported results on silicon using different techniques. However, silicon loaded in the [111] direction becomes metallic at a lower pressure. The silicon transition is highly sensitive to the type of stress applied.
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