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An improved technique for selective etching of GaAs and Ga1−xAlxAs

J. Appl. Phys. 51, 6441 (1980); doi:10.1063/1.327598

Issue Date: December 1980

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J. J. LePore
Bell Laboratories, Murray Hill, New Jersey 07974
An improved technique is described for selectively etching ''windows'' in GaAs crystals with Ga1−xAlxAs (0.30<=x<= 0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility. Journal of Applied Physics is copyrighted by The American Institute of Physics.
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KEYWORDS and PACS

Keywords
PACS
  • 81.60.Dq
    Materials science Corrosion, oxidation, and surface treatments Ceramics and refractories
  • YEAR: 1980

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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REFERENCES (3)

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  1. R. A. Logan and F. K. Reinhart, J. Appl. Phys. 44, 4172 (1973).
  2. The Jet Thinning Instrument is manufactured by South Bay Technology, Inc.
  3. Zh. I. Alferov, S. A. Gurevich, M. N. Miserov, and E. L. Portnoi, Zh. Tekh. Fiz. 45, 2602 (1975).

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