An improved technique for selective etching of GaAs and Ga1−xAlxAs
J. Appl. Phys. 51, 6441 (1980); doi:10.1063/1.327598
Issue Date: December 1980
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An improved technique is described for selectively etching ''windows'' in GaAs crystals with Ga1−xAlxAs (0.30
x
0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility.
Journal of Applied Physics is copyrighted by The American Institute of Physics.
x
0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility.
Journal of Applied Physics is copyrighted by The American Institute of Physics.
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KEYWORDS and PACS
SEMICONDUCTOR MATERIALS,
ETCHING,
GALLIUM ARSENIDES,
ALUMINUM ARSENIDES,
WINDOWS,
CRYSTALS,
EPITAXY,
LAYERS
- 81.60.Dq
Materials science Corrosion, oxidation, and surface treatments Ceramics and refractories - YEAR: 1980
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
REFERENCES (3)
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- R. A. Logan and F. K. Reinhart, J. Appl. Phys. 44, 4172 (1973).
- The Jet Thinning Instrument is manufactured by South Bay Technology, Inc.
- Zh. I. Alferov, S. A. Gurevich, M. N. Miserov, and E. L. Portnoi,
Zh. Tekh. Fiz. 45, 2602 (1975) .







