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Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties

J. Appl. Phys. 53, 457 (1982); doi:10.1063/1.329947

Issue Date: January 1982

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T. Takebe, J. Saraie, and H. Matsunami
Department of Electronics, Faculty of Engineering, Kyoto University, Kyoto 606, Japan
Electronic properties of four defect centers (designated as E7, E8, I, and IV) in A1-doped n-CdTe single crystals annealed under various Cd vapor pressures ( pCd) have been investigated by a combined use of photocapacitance, deep level transient spectroscopy (DLTS), and thermally stimulated capacitance techniques. Electron trap E7 at Ec−0.68 eV, a dominant deep defect center in samples quenched after annealing under high pCd, has shown a strong interaction with the lattice vibrations (S>~30, S: electron-phonon coupling parameter). The photoionization threshold energy for electrons E<sup>0</sup><sub>n</sub> for the purely electronic transition has been estimated to be larger than 1.30 eV. Temperature dependence of the capture cross section for electrons sigma<sup>t</sup><sub>n</sub> has been found to be very weak. The configuration coordinate diagram for E7 has suggested that E7 will nonradiatively capture the free electron. On the other hand, recombination center E8 at Ec−0.74 eV, a dominant deep defect center in samples annealed under low pCd, has shown only a negligible interaction with the lattice vibrations (S~4) and has the photoionization threshold energies for electrons E<sup>0</sup><sub>n</sub> ( = 0.80 eV) and for holes E<sup>0</sup><sub>p</sub> ( = 0.95 eV) close to the thermal ionization energies for electrons E<sup>t</sup><sub>n</sub> ( = 0.74 eV) and for holes E<sup>t</sup><sub>p</sub> ( = 0.83 eV), respectively. The configuration coordinate diagram for E8 has revealed that E8 can radiatively capture the free electron and the free hole and can emit photons of ~0.66 and ~0.75 eV, respectively. E7 and E8 have been proposed to be identical with the levels previously reported as the doubly ionized Cd interstitial and the doubly ionized Cd vacancy, respectively. As to true origins of these centers, the data obtained in this study have suggested that both E7 and E8 may be donorlike complex centers including native defects, or impurities whose solubilities or stable sites in the lattice are strongly dependent on pCd. Hole trap IV at Ev +0.48 eV, which gradually decreases in concentration with decreasing pCd, has shown a weak interaction with the lattice vibrations (S~6.7). It has been revealed that level IV can capture the free electron with emission of the photon of ~1.0 eV. This level has been attributed to an impurity whose solubility in the crystal is moderately dependent on pCd. Electron trap I, which exists only in samples quenched after annealing under the highest pCd and have an electron-repelling barrier, has shown a very strong interaction with the lattice vibrations. Journal of Applied Physics is copyrighted by The American Institute of Physics.
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KEYWORDS and PACS

Keywords
PACS
  • 71.55.Fr
    Electron states Impurity and defect levels Tetrahedrally bonded nonmetals
  • 81.40.Rs
    Materials science Treatment of materials and its effects on microstructure and properties Electrical and magnetic properties (in relation with treatment conditions)
  • 78.50.Ge
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Impurity and defect absorption in solids Semiconductors
  • YEAR: 1982

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0021-8979 (print)   1089-7550 (online)
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REFERENCES (52)
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  1. For example, S. T. Panlelides, Rev. Mod. Phys. 50, 797 (1978).
  2. G. L. Miller, D. V. Lang, and L. C. Kimerling, Annu. Rev. Mater. Sci. 7, 377 (1977).
  3. H. G. Grimmeiss, Annu. Rev. Mater. Sci. 7, 341 (1977).
  4. Proceedings of the 15th International Conference on Physics of Semiconductors (Kyoto), Sept. 1980;
    5. J. Phys. Soc. Jpn. A 49, 206 (1980).
  5. Record of Meeting at the Allen Clark Research Center of the Plessey Co., Nov. 1976;
    6. Philos. Mag. 36, 977 (1977).
  6. International Conference on Recombination in Semiconductors (England), Aug.-Sept. 1978;
    7. Solid-State Electron. 21, 1273 (1978).
  7. A. Mircea and D. Bois, Inst. Phys. Conf. Ser. 46, 82 (1979) and references therein.
  8. K. Zanio, “Cadmium Telluride,” in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer, (Academic, New York, 1978), Vol. 13, pp. 115–163.
  9. T. Takebe, H. Ono, J. Saraie, and T. Tanaka, Solid State Commun. 37, 391 (1981).
  10. G. M. Martin, A. Mitonneau, D. Pons, A. Mircea, and D. W. Woodard, J. Phys. C 13, 3855 (1980).
  11. G. Lucovsky, Solid State Commun. 3, 299 (1965).
  12. H. G. Grimmeiss and L.-A. Ledebo, J. Phys. C 8, 2615 (1975).
  13. B. Monemar and L. Samuelson, Phys. Rev. B 18, 809 (1978).
  14. J. M. Noras, J. Phys. C 13, 4779 (1980).
  15. A. A. Kopylov and A. N. Pikhtin, Sov. Phys. Semicond. 8, 1563 (1975).
  16. A. A. Kopylov and A. N. Pikhtin, Sov. Phys. Solid State 16, 1200 (1975).
  17. K. Huang and A. Rhys, Proc. R. Soc. London A 204, 406 (1950).
  18. D. T. F. Marple, Phys. Rev. 129, 2466 (1963).
  19. D. de Nobel, Phillips Res. Rep. 14, 361 (1959).
  20. L. L. Rosier and C. T. Sah, J. Appl. Phys. 42, 4000 (1971).
  21. J. M. Herman, III and C. T. Sah, J. Appl. Phys. 44, 1259 (1973).
  22. S. F. Timashev, Sov. Phys. Solid State 14, 2267 (1973).
  23. S. T. Timashev, Sov. Phys. Semicond. 9, 67 (1975).
  24. A. Mooradian and G. B. Wright, Proceedings of the 9th International Conference on Physics of Semiconductors (Moscow) (Nauka, Leningrad, 1968), Vol. 2, p. 1020.
  25. J. L. Pautra, Solid-State Electron. 23, 661 (1980).
  26. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
  27. J. Camassel, D. Auvergne, H. Mathieu, R. Triboulet, and Y. Marfaing, Solid State Commun. 13, 63 (1973).
  28. C. Scharager, J. C. Muller, R. Stuck, P. Siffert, Phys. Status Solidi A 31, 247 (1975).
  29. C. Canali, M.-A. Nicolet, and J. W. Mayer, Solid-State Electron. 18, 871 (1975).
  30. A. M. Mancini, C. Manfredotti, C. de Blasi, G. Micocci, and A. Tepore, Rev. Phys. Appl. 12, 255 (1977).
  31. B. Rabin, H. Tabatabai, and P. Siffert, Phys. Status Solidi A 49, 577 (1978).
  32. R. C. Whelan and D. Shaw, Phys. Status Solidi 29, 145 (1968).
  33. F. T. J. Smith, Metall. Trans. 1, 617 (1970).
  34. Yu. V. Rud' and K. V. Sanin, Sov. Phys. Semicond. 5, 244 (1971).
  35. S. S. Chern, H. R. Vydanath, and F. A. Kroger, J. Solid State Chem. 14, 33 (1975).
  36. Y. Marfaing, J. Lascaray, and R. Triboulet, Inst. Phys. Conf. Ser. 22, 201 (1974).
  37. M. R. Lorenz and B. Segall, Phys. Lett. 7, 18 (1963).
  38. M. R. Lorenz, B. Segall, and H. H. Woodbury, Phys. Rev. 134, A751 (1964).
  39. R. Čumpelík, J. Kargelová, and E. Klier, Czech. J. Phys. B 19, 1003 (1969).
  40. N. V. Agrinskaya, E. N. Arkad'eva, O. A. Matveev, and Yu. V. Rud', Sov. Phys. Semicond. 2, 776 (1969).
  41. P. S. Kireev, V. N. Martynov, and A. V. Vanyukov, Sov. Phys. Semicond. 3, 146 (1969).
  42. V. A. Chapnin, Sov. Phys. Semicond. 3, 481 (1969).
  43. V. A. Sokolova, V. S. Vavilov, A. F. Plotonikov, and V. A. Chapnin, Sov. Phys. Semicond. 3, 612 (1969).
  44. N. V. Agrinskaya, E. N. Arkad'eva, and O. A. Matveev, Sov. Phys. Semicond. 4, 306 (1970).
  45. B. M. Vul, V. S. Vavilov, V. S. Ivanov, V. B. Stopachinskii, and V. A. Chapnin, Sov. Phys. Semicond. 6, 1255 (1973).
  46. P. Höschl, P. Polivka, V. Prosser, and A. Sakalas, Czech. J. Phys. B 25, 585 (1975).
  47. P. Siffert, J. Berger, C. Scharager, A. Cornet, R. Stuck, R. O. Bell, H. B. Serreze, and F. V. Wald, IEEE Trans. Nucl. Sci. NS-23, 159 (1976).
  48. As Pcd increases, Si atom goes more easily into Te site because the concentration of the Te vacancy increases and can become a doubly ionizable acceptor (SiTe). dc are emission spectrographic analysis revealed the presence of Si and Cu of the order of 10−7 cm−3 in our crystals. If E8 is attributed to the Sicd donor, almost all Si atoms exist as the SiTe acceptor. The SiTe acceptor may form a shallow level which cannot contribute to either the PHCAP or the DLTS spectra.
  49. F. J. Bryant and E. Webster, Phys. Status Solidi 21, 315 (1967).
  50. F. J. Bryant, A. F. J. Cox, and E. Webster, J. Phys. C 2, 1737 (1968).
  51. M. Caillot, Phys. Lett. A 38, 1 (1972).
  52. T. Taguchi, J. Sirafuji, and Y. Inuishi, Inst. Phys. Conf. Ser. 23, 272 (1975).

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