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The effect of Cu diffusion in a Cu2S/CdS heterojunction solar cell
The effect of copper diffusion from the p-Cu2S into the n-CdS region, due to heat treatment, in a Cu2S/CdS heterojunction photovoltaic cell is investigated, using the energy band diagram resulting fro...
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Theory of photocurrent in semiconductor-electrolyte junction solar cells
Expressions are derived for the current-voltage characteristics of semiconductor-electrolyte junctions. Charge transfer kinetics, surface recombination, recombination in the quasineutral region and in...

Image force effects in metal-oxide-semiconductor solar cells

J. Appl. Phys. 53, 1734 (1982); doi:10.1063/1.331641

Issue Date: March 1982

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V. N. Ojha, P. K. Bhatnagar, S. R. Dhariwal, and K. K. Sharma
Department of Physics & Astrophysics, University of Delhi, Delhi-110007, India
Image force effects have been shown to play an important role in deciding the current-voltage characteristics of the Metal-Oxide-Semiconductor (MOS) Solar Cell. Because of reduction in barrier height and the barrier width, the dark saturation current is increased, and thereby the open circuit voltage is greatly affected. Journal of Applied Physics is copyrighted by The American Institute of Physics.
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KEYWORDS and PACS

Keywords
PACS
  • 84.60.Jt
    Electromagnetic technology* Direct energy conversion and energy storage Solar cells and arrays
  • 72.20.Jv
    Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators Charge carriers: generation, recombination, lifetime, and trapping
  • YEAR: 1982

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (14)
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