Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
On the Hall effect observation of ~0.07 eV deep acceptor in gallium arsenide
Hall effect observation of an ~0.07 eV deep acceptor in GaAs single crystals converted to p type by heat treatment is reported. The acceptor is thought to be identical with the center responsible for ...
Next Article
Broad luminescent band in Zn-doped AlxGa1−xAs grown by metalorganic chemical vapor deposition
We have investigated by photoluminescence the low energy broad band in Zn-doped AlxGa1−xAs grown by metalorganic chemical vapor deposition. The emission peak energy of the band shifts monotonica...

Deep levels in n-CdTe

J. Appl. Phys. 55, 3605 (1984); doi:10.1063/1.332960

Issue Date: 15 May 1984

You are not logged in to this journal. Log in

L. C. Isett and Pranab K. Raychaudhuri
Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
Deep-level transient spectroscopy (DLTS) was used to study electron traps in n-CdTe crystals. High-purity undoped and indium-doped samples were examined with Au Schottky barriers. Five levels were observed in CdTe:In, three of which are in good agreement with previously observed defect levels. The capture cross sections of these levels were measured. The energy levels relative to the conduction band were measured by isothermal DLTS. A single very deep level was observed in high-purity undoped CdTe. Modified CdTe surfaces were produced by brief (~60 s) low-temperature (400 °C) annealing in air or argon. Schottky barriers made on these surfaces indicate a decrease in the near-surface carrier concentration. Changes in deep level concentrations were also observed. A very deep level (labeled IR5 in our study) (Ec =0.82 eV) is most changed by this process; annealing increases its concentration. It is suggested that IR5 is a native defect. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 12 October 1983; accepted 1 February 1984
Permalink: http://link.aip.org/link/?JAPIAU/55/3605/1
BUY THIS ARTICLE   (US$24)
Download PDF (563 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 71.55.Fr
    Electron states Impurity and defect levels Tetrahedrally bonded nonmetals
  • 73.30.+y
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface double layers, Schottky barriers, and work functions
  • 81.40.Ef
    Materials science Treatment of materials and its effects on microstructure and properties Cold working, work hardening; annealing, recovery, and recrystallization; textures
  • YEAR: 1984

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (27)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. K. Zanio, Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1978), Vol. 13, pp. 164–210.
  2. C. Scharager, P. Siffert, P. Höschl, P. Moravec, and M. Vanecek, Phys. Status Solidi A 66, 87 (1981).
  3. T. Takebe, J. Saraie, and H. Matsunami, J. Appl. Phys. 53, 457 (1982).
  4. C. B. Norris and K. Zanio, J. Appl. Phys. 53, 6347 (1982).
  5. K. Yokota, S. Katayama, and T. Yoshikawa, Jpn. J. Appl. Phys. 21, 456 (1981).
  6. G. M. Martin, E. Fogarassy, and E. Fabre, J. Appl. Phys. 47, 264 (1976).
  7. D. Verity, D. Shaw, F. J. Bryant, and C. G. Scott, J. Phys. C 15, L573 (1982).
  8. T. Takebe, T. Hirata, J. Saraie, and H. Matsunami, J. Phys. Chem. Solids 43, 5 (1982).
  9. H. Sitter, H. Heinrich, K. Lischka, and A. Lopez-Otero, J. Appl. Phys. 53, 4948 (1982).
  10. R. T. Collins, T. F. Kuech, and T. C. McGill, J. Vac. Sci. Technol. 21, 191 (1982).
  11. P. K. Raychaudhuri (unpublished).
  12. II-VI Corporation, Saxonburg, PA.
  13. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
  14. G. L. Miller, J. V. Ramirez, and D. A. H. Robinson, J. Appl. Phys. 46, 2638 (1975).
  15. C. R. Crowell and S. Aliphanahi, Solid-State Electron. 24, 25 (1981).
  16. D. L. Losee, J. Appl. Phys. 46, 2204 (1975).
  17. O. Engstrom and A. Alm, Solid-State Electron. 21, 1571 (1978).
  18. G. Vincent, Appl. Phys. 23, 215 (1980).
  19. O. Wada, A. Majerfeld, and A. N. M. M. Choudhury, J. Appl. Phys. 51, 423 (1980).
  20. H. Rhoderick, Metal-Semiconductor Contacts (Oxford University, Oxford, England, 1978).
  21. T. F. Kuech, J. Appl. Phys. 52, 4874 (1981).
  22. G. L. Miller, D. V. Lang, and L. C. Kimmerling, Ann. Rev. Mater. Sci. 7, 377 (1977).
  23. A. Zylbersztejn, Appl. Phys. Lett. 33, 200 (1978).
  24. T. Yoshikawa, K. Yokota, S. Tamura, and S. Katayama, Technol. Rep. Kansai Univ. 22, 67 (1981).
  25. T. Taguchi and Y. Inuishi, J. Appl. Phys. 51, 4757 (1980).
  26. J.-W. Chen and A. G. Milnes, Ann. Rev. Mater. Sci. 10, 157 (1980).
  27. G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. 50, 5484 (1979).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics