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The image-force effect at a metal-semiconductor contact with an interfacial insulator layer

J. Appl. Phys. 56, 2823 (1984); doi:10.1063/1.333816

Issue Date: 15 November 1984

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Andrei Tugulea
Department of Electrical Engineering, Polytechnical Institute of Bucharest, Bucharest 77748, Romania

Dan Dascalu
Department of Electronics and Communications, Polytechnical Institute of Bucharest, Bucharest 77748, Romania
The theory of image-force lowering of the potential barrier at a metal-semiconductor contact has sometimes been incorrectly applied to the metal-insulator-semiconductor system. In this paper the image-force potential is derived for a finite-thickness insulator bounded by a metal at one side and another insulator (or semiconductor) at the other side. The exact solution corresponds to an infinite series of images of the electron with respect to both interfaces. If the interfacial insulator permittivity is lower than that of the semiconductor, then the image force in the vicinity of the insulator-semiconductor interface will pull the electron away from the metal. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 7 December 1983; accepted 11 April 1984
Permalink: http://link.aip.org/link/?JAPIAU/56/2823/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Qv
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Interfaces Metalinsulatorsemiconductor structures (including semiconductor-to-insulator)
  • 73.30.+y
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface double layers, Schottky barriers, and work functions
  • YEAR: 1984

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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REFERENCES (16)
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