Penumbral neutron imaging—optimization and simulation
This paper describes the optimization of the penumbral neutron imaging camera. The optimum parameters are qualified by practical considerations and the resulting camera is tested using a full Monte Ca...
This paper describes the optimization of the penumbral neutron imaging camera. The optimum parameters are qualified by practical considerations and the resulting camera is tested using a full Monte Ca...
State-of-the-art AlGaAs alloys by antimony doping
Historically GaAlAs alloys grown by molecular-beam epitaxy have high deep level concentrations (>1016 cm−3), low luminescent efficiency with broad peaks, and are difficult to dope controllabl...
Historically GaAlAs alloys grown by molecular-beam epitaxy have high deep level concentrations (>1016 cm−3), low luminescent efficiency with broad peaks, and are difficult to dope controllabl...
Steady-state ion pumping of a potential dip near an electron collecting anode
J. Appl. Phys. 60, 1295 (1986); doi:10.1063/1.337299
Issue Date: 15 August 1986
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A negative potential well is found in front of a positively biased electron collecting plate in a low temperature laboratory plasma. The well parameters are governed by the Child–Langmuir condition and a necessary condition for the existence of such potential wells is the presence of an ion pumping mechanism which removes trapped ions from the wells. Here ion pumping was provided by the presence of negative electrically floating ceramic on the back of the plate.
Journal of Applied Physics is copyrighted by The American Institute of Physics.
| History: | Received 8 January 1986; accepted 21 April 1986 |
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KEYWORDS and PACS
- 52.25.Gj
The physics of plasmas and electric discharges Plasma properties Fluctuation phenomena - 52.25.Fi
The physics of plasmas and electric discharges Plasma properties Transport properties - 52.25.Mq
The physics of plasmas and electric discharges Plasma properties Dielectric properties; dispersion relations - YEAR: 1986
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0021-8979 (print)
1089-7550 (online)
AIP
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