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A theoretical description of the diffusion of a thin film of titanium (Ti) into a lithium niobate (LiNbO3) crystal is reported. A variable depth diffusion coefficient is used to explain the prominent ...
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Structural and optical properties of CoxIn2S3+x thin films grown by spray pyrolysis method
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Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation technique

J. Appl. Phys. 60, 2351 (1986); doi:10.1063/1.337144

Issue Date: 1 October 1986

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Akihisa Matsuda and Kazunobu Tanaka
Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Ibaraki 305, Japan
The deposition kinetics of hydrogenated amorphous silicon (a-Si:H) from a SiH4 glow-discharge plasma have been investigated by examining the diffusion of SiH3 monoradicals in the discharge-free space within a triode reactor. This experiment suggests that the SiH3 radicals are responsible for about 37% of the total deposition rate of a-Si:H in a conventional SiH4 glow-discharge process. The contribution of other radicals and atoms to the deposition rate is also discussed through the analysis of reaction-rate constants. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 22 April 1986; accepted 26 June 1986
Permalink: http://link.aip.org/link/?JAPIAU/60/2351/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Gh
    Materials science Methods of thin-film deposition Chemical vapor deposition
  • 68.55.Gi
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin films: growth, structure, epitaxy, and nonelectronic properties Other thin film growth studies
  • 52.80.Hc
    The physics of plasmas and electric discharges Electric discharges Glow; corona
  • 82.65.Nz
    Physical chemistry Surface processes Other gassurface interactions
  • YEAR: 1986

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (19)
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