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Device modeling of ferroelectric capacitors

J. Appl. Phys. 68, 6463 (1990); doi:10.1063/1.346845

Issue Date: 15 December 1990

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S. L. Miller, R. D. Nasby, J. R. Schwank, M. S. Rodgers, and P. V. Dressendorfer
Division 2144, Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185
A physically based methodology is developed for modeling the behavior of electrical circuits containing nonideal ferroelectric capacitors. The methodology is illustrated by modeling the discrete ferroelectric capacitor as a stacked dielectric structure, with switching ferroelectric and nonswitching dielectric layers. Electrical properties of a modified Sawyer–Tower circuit are predicted by the model. Distortions of hysteresis loops due to resistive losses as a function of input signal frequency are accurately predicted by the model. The effect of signal amplitude variations predicted by the model also agree with experimental data. The model is used as a diagnostic tool to demonstrate that cycling degradation, at least for the sample investigated, cannot be modeled by the formation of nonswitching dielectric layer(s) or the formation of conductive regions near the electrodes, but is consistent with a spatially uniform reduction in the number of switching dipoles. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 30 July 1990; accepted 31 August 1990
Permalink: http://link.aip.org/link/?JAPIAU/68/6463/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.De
    Electrical and magnetic devices Semiconductor devices Semiconductor-device characterization and modeling
  • 77.80.-e
    Dielectric properties and materials Ferroelectricity and antiferroelectricity
  • 85.50.Ly
    Electrical and magnetic devices Dielectric devices Ferroelectric and piezoelectric devices
  • 73.40.Rw
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metalinsulatormetal structures
  • YEAR: 1990

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (18)
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