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Depth profiling of nonuniform optical absorption in thin films: Application to hydrogenated amorphous silicon

J. Appl. Phys. 70, 5025 (1991); doi:10.1063/1.349007

Issue Date: 1 November 1991

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A. Asano and M. Stutzmann
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, W-7000 Stuttgart 80, Germany
The amplitude of interference fringes in optical absorption spectra for thin films has been analyzed in the range of low absorption coefficients and was found to be related to a depth profile of absorbers, e.g., defects. This method has been applied to the subband-gap optical absorption spectra measured by photothermal deflection spectroscopy for hydrogenated amorphous silicon thin films. It is shown that the analysis of interference fringes provides unique information about surface and interface defects in this material. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 19 April 1991; accepted 15 July 1991
Permalink: http://link.aip.org/link/?JAPIAU/70/5025/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.50.Ge
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Impurity and defect absorption in solids Semiconductors
  • 78.65.Gb
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds) Other inorganics
  • 42.10.Jd
    Optics Propagation and transmission in homogeneous media Interference
  • 42.10.Ke
    Optics Propagation and transmission in homogeneous media Absorption
  • YEAR: 1990-91

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (38)
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  1. W. B. Jackson and N. M. Amer, Phys. Rev. B 25, 5559 (1982).
  2. N. M. Amer and W. B. Jackson, in Semiconductors and Semimetals, edited by J. I. Pankove (Academic, Orlando, FL, 1984), Vol. 21B, p. 83.
  3. S. Yamasaki, Philos. Mag. B 56, 79 (1987).
  4. S. Hasegawa and Y. Imai, Philos. Mag. B 46, 239 (1982).
  5. W. B. Jackson, D. K. Biegelsen, R. J. Nemanich, and J. C. Knights, Appl. Phys. Lett. 42, 105 (1983).
  6. H. Curtins and M. Favre, in Amorphous Silicon and Related Materials, edited by H. Fritzsche (World Scientific, Singapore, 1988), p. 329.
  7. N. Hata, S. Wagner, P. Roca i Cabarrocas, and M. Favre, Appl. Phys. Lett. 56, 2448 (1990).
  8. M. Stutzmann, W. B. Jackson, and C. C. Tsai, Phys. Rev. B 32, 23 (1985).
  9. X. Xu, A. Morimoto, M. Kumeda, and T. Shimizu, Jpn. J. Appl. Phys. 26, L1818 (1987).
  10. T. Shimizu, X. Xu, H. Kidoh, A. Morimoto, and M. Kumeda, J. Appl. Phys. 64, 5045 (1988).
  11. I. Solomon, T. Dietl, and D. Kaplan, J. Phys. (Paris) 39, 1241 (1978).
  12. S. Guha, K. L. Narasimhan, R. V. Navkhandewala, and S. M. Pietruszko, Appl. Phys. Lett. 37, 572 (1980).
  13. R. C. Frye, J. J. Kumler, and C. C. Wong, Appl. Phys. Lett. 50, 101 (1987).
  14. S. Komuro, Y. Aoyagi, Y. Segawa, S. Namba, A. Masuyama, H. Okamoto, and Y. Hamakawa, Appl. Phys. Lett. 43, 968 (1983).
  15. M. Vanecek, J. Kocka, J. Stuchlik, Z. Kozisek, O. Stika, and A. Triska, Solar Energy Mater. 8, 411 (1983).
  16. M. Vanecek, A. Abraham, O. Stika, J. Stuchlik, and J. Kocka, Phys. Status Solidi A 83, 617 (1984).
  17. J. Kocka, J. Non-Cryst. Solids 90, 91 (1987).
  18. G. Nobile and T. J. McMahon, J. Appl. Phys. 67, 578 (1990).
  19. Z.-E. Smith, V. Chu, K. Shepard, S. Aljishi, D. Slobodin, J. Kolodzey, S. Wagner, and T. L. Chu, Appl. Phys. Lett. 50, 1521 (1987).
  20. G. Grillo and L. De Angelis, J. Non-Cryst. Solids 114, 750 (1989).
  21. L. I. Epstein, J. Opt. Soc. Am. 42, 806 (1952).
  22. H. Sakai, Y. Ichikawa, T. Ichimura, S. Saitoh, and Y. Uchida, in Proceedings of the Sixth EC Photovoltaic Solar Energy Conference, London, 1985, edited by W. Palz and F. C. Treble (Reidel, Dordrecht, 1985), p. 682.
  23. M. Stutzmann, C. P. Herrero, M. Ingels, and A. Breitschwerdt, in MRS Symposium Proceedings, Boston, 1989, edited by P. M. Fauchet, K. Tanaka, and C. C. Tsai (MRS, Pittsburgh, 1990), Vol. 164, p. 189.
  24. Y. Fujii, A. Moritani, and J. Nakai, Jpn. J. Appl. Phys. 20, 361 (1981).
  25. K. Driss-Khodja, A. Gheorghiu, and M. L. Thèye, Opt. Commun. 55, 169 (1985).
  26. J. S. Payson and S. Guha, Phys. Rev. B 32, 1326 (1985).
  27. Z.-E. Smith, S. Aljishi, D. Slobodin, V. Chu, S. Wagner, P. M. Lenahan, R. R. Arya, and M. S. Bennett, Phys. Rev. Lett. 57, 2450 (1986).
  28. L. Chahed, G. Vuye, M. L. Thèye, Y. M. Li, K. D. Mackenzie, and W. Paul, J. Non-Cryst. Solids 97&98, 727 (1987).
  29. L. Chahed, A. Gheorghiu, M. L. Thèye, I. Ardelean, C. Senemaud, and C. Godet, J. Non-Cryst. Solids 114, 471 (1989).
  30. T. Miya, Y. Terunuma, T. Hosaka, and T. Miyashita, Electron. Lett. 15, 106 (1979).
  31. G. K. Walters and T. L. Estle, J. Appl. Phys. 32, 1854 (1961).
  32. R. A. Street, Phys. Rev. Lett. 49, 1187 (1982).
  33. M. Stutzmann and M. S. Brandt, J. Appl. Phys. 68, 1406 (1990).
  34. G. H. Lin, J. R. Doyle, M. He, and A. Gallagher, J. Appl. Phys. 64, 188 (1988).
  35. Y. Toyoshima, K. Arai, A. Matsuda, and K. Tanaka, Appl. Phys. Lett. 56, 1540 (1990);
    36. 57, 1028 (1990).
  36. K. Winer and L. Ley, in Amorphous Silicon and Related Materials, edited by H. Fritzsche (World Scientific, Singapore, 1988), p. 365.
  37. X.-M. Tang, J. Weber, Y. Baer, and F. Finger, Solid State Commun. 74, 171 (1990);
    38. Phys. Rev. B 41, 7945 (1990).
  38. D. E. Carlson and C. W. Magee, Appl. Phys. Lett. 33, 81 (1978).

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