Magnetoresistance in rf-sputtered (NiFe/Cu/Co/Cu) spin-valve multilayers
J. Appl. Phys. 73, 5515 (1993); doi:10.1063/1.353687
Issue Date: 15 May 1993
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A study of the variation of the magnetoresistance in (Ni80Fe20/Cu/Co/Cu) multilayers with the thicknesses tNiFe, tCo, and tCu of each type of component layer has been performed. The magnetoresistance (MR), which at 4.2 K is larger than 20% for many samples, has been measured for fields applied both parallel and perpendicular to the current. This allows a direct measurement of the anisotropic magnetorestistance as well as an estimate of the spin-valve contribution to the total MR. The dependence of the MR on tCu indicates the presence of an oscillatory interlayer exchange coupling through the Cu layers with a period of about 12 Å. The dependence of the MR on tNiFe and tCo was studied at tCu=50 Å, for which the coupling is negligible. In this limit, the variation of the MR is dominated by the thickness dependence of the NiFe and Co component layer coercivities, which determine the degree of antiparallel alignement obtained during magnetization reversal.
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KEYWORDS and PACS
MULTILAYERS,
SPUTTERED MATERIALS,
COBALT,
COPPER,
BINARY ALLOYS,
NICKEL BASE ALLOYS,
IRON ALLOYS,
MAGNETORESISTANCE,
SIZE EFFECT,
EXCHANGE INTERACTIONS,
OSCILLATIONS
- 73.50.Jt
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport phenomena in thin films Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) - 73.61.At
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electrical properties of specific thin films and layer structures Metal and metallic alloys - 75.70.Cn
Magnetic properties and materials Magnetic films and multilayers Interfacial magnetic properties - YEAR: 1993
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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