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Visible photoluminescence in Si+-implanted silica glass

J. Appl. Phys. 75, 7779 (1994); doi:10.1063/1.357031

Issue Date: 15 June 1994

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Tsutomu Shimizu-Iwayama and Katsunori Fujita
Department of Materials Science, Aichi University of Education, Igaya-cho, Kariya-shi, Aichi 448, Japan

Setsuo Nakao and Kazuo Saitoh
National Industrial Research Institute of Nagoya, Hirate-cho, Kita-ku, Nagoya 462, Japan

Tetsuo Fujita
Shizuoka Institute of Science and Technology, Fukuroi-shi, Shizuoka 437, Japan

Noriaki Itoh
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
We have investigated visible photoluminescence excited by Ar-ion laser (488 nm, 2.54 eV) at room temperature from Si+-implanted silica glass, as-implanted and after subsequent annealing in vacuum. We found two visible luminescence bands: one peaked around 2.0 eV, observed in as-implanted specimens and annealed completely after heating to about 600 °C, the other peaked around 1.7 eV observed only after heating to about 1100 °C, the temperature at which Si segregates from SiOx. It was found that the 2.0 eV band anneals parallel to the E[script '] centers, as detected by electron spin resonance studies. It was also found that Raman lines around 520 cm−1, due to Si—Si bonds, grow and that interference patterns are induced by annealing Si+-implanted silica glass. Based on these studies, we ascribe the 2.0 eV band to the electron-hole recombination in Si-rich SiO2 and the 1.7 eV band to the electron-hole recombination in the interface between the Si nanocrystal and the SiO2 formed by segregation of crystalline Si from SiOx. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 22 November 1993; accepted 1 March 1994
Permalink: http://link.aip.org/link/?JAPIAU/75/7779/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.Ww
    Structure of solids and liquids; crystallography Defects in crystals Doping and impurity implantation in other materials
  • 78.55.Hx
    Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Other solid inorganic materials
  • 76.30.Lh
    Magnetic resonances and relaxations in condensed matter, Mössbauer effect Electron paramagnetic resonance and relaxation Other ions and impurities
  • YEAR: 1994

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (30)
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  1. A. Perez, Nucl. Instrum. Methods B 1, 621 (1984).
  2. S. Noda, H. Doi, T. Hioki, J. Kawamoto, and O. Kamigaito, J. Mater. Sci. 22, 4267 (1987).
  3. P. D. Townsend, J. Phys. E 10, 197 (1977).
  4. P. D. Townsend, Rep. Prog. Phys. 50, 501 (1987).
  5. R. H. Magruder III, R. A. Weeks, R. A. Zuhr, and G. Whichard, J. Non-Cryst. Solids 129, 46 (1991).
  6. A. H. Van Ommen, J. Appl. Phys. 56, 2790 (1984).
  7. R. A. B. Devine, J. Appl. Phys. 56, 563 (1984).
  8. H. Hosono, Y. Suzuki, Y. Abe, K. Oyoshi, and S. Tanaka, J. Non-Cryst. Solids 142, 287 (1992).
  9. T. Shimizu-Iwayama, T. Niimi, S. Nakao, and K. Saitoh, Jpn. J. Appl. Phys. 32, L1451 (1993).
  10. K. Becker, L. Yang, R. F. Haglund, Jr., R. H. Magruder, R. A. Weeks, and R. A. Zuhr, Nucl. Instrum. Methods B 59/60, 1304 (1991).
  11. H. Hosono, Y. Abe, Y. L. Lee, T. Tokizaki, and A. Nakamura, Appl. Phys. Lett. 61, 2747 (1992).
  12. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
  13. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
  14. D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, and J. A. Cutro, J. Appl. Phys. 56, 401 (1984).
  15. S. Furukawa and T. Miyasato, Jpn. J. Appl. Phys. 27, L2207 (1988).
  16. H. Takagi, H. Ogawa, Y. Yamazaki, A. Ishizaki, and T. Nakagiri, Appl. Phys. Lett. 56, 2379 (1990).
  17. H. Morisaki, F. W. Ping, H. Ono, and K. Yazawa, J. Appl. Phys. 70, 1869 (1991).
  18. T. Shimizu-Iwayama, M. Ohshima, T. Niimi, S. Nakao, K. Saitoh, T. Fujita, and N. Itoh, J. Phys.: Condens. Matter. 5, L375 (1993).
  19. T. Fujita, M. Fukui, S. Okada, T. Shimizu-Iwayama, T. Hioki, and N. Itoh, Nucl. Instrum. Methods B (in press).
  20. K. F. Heidemann, Radiat. Eff. 61, 235 (1982).
  21. M. Miyake and K. Kiuchi, Appl. Phys. Lett. 46, 879 (1985).
  22. T. Fujita, M. Fukui, and N. Itoh, Jpn. J. Appl. Phys. 26, L1967 (1987).
  23. T. Fujita, M. Fukui, S. Okada, T. Shimizu, and N. Itoh, Jpn. J. Appl. Phys. 28, L1254 (1989).
  24. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Vol. 1 (Pergamon, New York, 1985).
  25. T. Shimizu, N. Itoh, and N. Matsunami, J. Appl. Phys. 64, 3663 (1988).
  26. C. Kittel and E. Abrahams, Phys. Rev. 90, 238 (1953).
  27. B. G. Varshal, V. N. Denisof, B. N. Marvin, G. A. Pavlova, V. B. Padobedov, and K. E. Sterin, Opt. Spektrosk. 47, 344 (1979).
  28. T. Matsushita, T. Aoki, T. Ohtsu, H. Yamoto, H. Hayashi, M. Okayama, and Y. Kawana, Jpn. J. Appl. Phys. Supplement 15, 35 (1976).
  29. T. Okada, T. Iwaki, K. Yamamoto, H. Kasahara, and K. Abe, Solid State Commun. 49, 809 (1984).
  30. T. Takagahara and K. Takeda, Phys. Rev. B 46, 15578 (1992).

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