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Dielectric and piezoelectric properties of lead zirconate titanate doped with chromium oxide
Vector impedance measurements of radial modes of thin disks (diameter 13 mm and thickness 1 mm) of Pb(Zr0.515Ti0.485)O3 doped with Cr2O3 have been carried out using an impedance analyzer. Piezoelectri...
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Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. II. Experimental verification and implications
In part I, the concept of a temperature dependent domain stability map was developed for tetragonal ferroelectrics grown on cubic substrates. In this paper, a range of experimental data on domain popu...

Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory

J. Appl. Phys. 76, 466 (1994); doi:10.1063/1.357097

Issue Date: 1 July 1994

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J. S. Speck and W. Pompe
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106
Possible mechanisms for strain relaxation in ferroelectric thin films are developed. The models are applicable to tetragonal thin film ferroelectrics grown epitaxially on (001) cubic single crystal substrates. We assume growth at temperatures in excess of the Curie temperature (Tc). The extent of strain accommodation by misfit dislocations is considered at the growth temperature (Tg). On cooling to Tc, further misfit dislocation generation is possible due to differences in thermal expansion behavior of the film and substrate. During the paraelectric to ferroelectric transition (PE-->FE) additional strains develop in the film. The total strain for the FE phase may be relieved either by further misfit generation or by domain formation. We have developed temperature dependent stability maps that predict the stable domain structure that forms during the PE-->FE transition. The stability maps incorporate the role of the following parameters: (i) substrate lattice parameter, (ii) differential thermal expansion characteristics between the film and substrate, (iii) cooling rate, and (iv) depolarizing fields and electrode geometry. Further, the role of dislocation stabilization of domain patterns is discussed. Journal of Applied Physics is copyrighted by The American Institute of Physics.
History: Received 5 November 1993; accepted 3 March 1994
Permalink: http://link.aip.org/link/?JAPIAU/76/466/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.80.Dj
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Ferroelectricity and antiferroelectricity Domain structure; hysteresis
  • 68.60.Bs
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Physical properties of thin films, nonelectronic Mechanical and acoustical properties
  • YEAR: 1994

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (21)
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  1. J. T. Cheung, P. E. D. Morgan, and R. Neugaonkar, and M. Goorski, Integrated Ferroelec. 3, 147 (1993).
  2. R. Ramesh, W. K. Chan, A. lnam, B. Wilkens, H. Gilchrist, T. Sands, S. M. Tarascon, and V. G. Keramidas, MRS Symp. Proc. 243, 477 (1992).
  3. D. K. Fork, J. J. Kingston, G. B. Anderson, E. J. Tarsa, and J. S. Speck, MRS Symp. Proc. 310, 113 (1993).
  4. B. Jaffe, W. Cooke, and H. Jaffe, Piezoelectric Ceramics (Academic, New York, 1971).
  5. F. Jona and G. Shirane, Ferroelectric Crystals (Pergamon, New York, 1962).
  6. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Oxford University Press, Oxford, 1977).
  7. A. J. Moulson and J. M. Herbert, Electroceramics (Chapman and Hall, New York, 1990).
  8. G. A. Rossetti, L. E. Cross, and K. Kushida, Appl. Phys. Lett. 59, 2524 (1991).
  9. A. L. Roitburd, Phys. Status Solidi A 37, 329 (1976).
  10. A. L. Roytburd, Mater. Res. Soc. Symp. Proc. 221, 256 (1991).
  11. W. Pompe, X. Gong, Z. Suo, and J. S. Speck, J. Appl. Phys. 74, 6012 (1993).
  12. L. B. Freund, MRS Bull. 17, 52 (1992).
  13. J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic, New York, 1993).
  14. M. Tanaka and Y. Himiyama, Acta Crystallogr. A 31, S264 (1975).
  15. N. Doukhan and J. C. Doukhan, Phys. Chem. Minerals 13, 403 (1986).
  16. Y. Wang, J.-P. Poirier, and R. C. Liebermann, Phys. Chem. Minerals 16, 630 (1989).
  17. B. G. Demczyk, R. S. Rai, and G. Thomas, J. Am. Ceram. Soc. 73, 615 (1990).
  18. C. Kittel, Phys. Rev. 70, 965 (1946).
  19. T. Mitsui and H. Furuichi, Phys. Rev. 90, 193 (1953).
  20. J. C. Burfoot and G. W. Taylor, Polar Dielectrics and Their Application (University of California Press, Los Angeles, 1979).
  21. Landolt-Bornstein (Springer, Berlin).

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