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Effects of the piezoelectric field on quantum-confined Stark effect in (111)B InGaAs quantum-well structure

J. Appl. Phys. 85, 2221 (1999); doi:10.1063/1.369530

Issue Date: 15 February 1999

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John D. Bruno and Richard L. Tober
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783-1197
The quantum-confined Stark effect is studied in a single In.15Ga.85As quantum well embedded within the intrinsic region of a (111)B GaAs p-i-n diode structure. An expression for the density of quasibound quantum well states is derived and used to determine the optical transition energies in the structure. Satisfactory agreement between experimental results and theoretical predictions are obtained only when an In.15Ga.85As piezoelectric constant of e14 = –0.11(3) C/m2 is used in the analysis. This value for e14 is 79% of what one would obtain from a linear interpolation of the binary e14s and is significantly different from results obtained by others. Comparisons are made with other work, and speculations are made regarding the cause for the differences. ©1999 American Institute of Physics.
History: Received 14 September 1998; accepted 7 November 1998
Permalink: http://link.aip.org/link/?JAPIAU/85/2221/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films, surfaces, and low-dimensional structures III–V semiconductors
  • 78.20.Jq
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of bulk materials and thin films Electrooptical effects
  • 73.20.Dx
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Surface and interface electron states Electron states in low-dimensional structures (superlattices, quantum well structures and multilayers)
  • 77.65.Bn
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electromechanical effects Piezoelectric and electrostrictive constants
  • 85.30.Kk
    Electronic and magnetic devices; microelectronics Semiconductor devices Junction diodes
  • YEAR: 1999

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

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