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Fabrication and characterization of high aspect ratio perpendicular patterned information storage media in an Al2O3/GaAs substrate

J. Appl. Phys. 85, 5489 (1999); doi:10.1063/1.369871

Issue Date: 15 April 1999

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Joyce Wong and Axel Scherer
Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125

Mladen Todorovic and Sheldon Schultz
Center for Magnetic Recording Research and Department of Physics, University of California, San Diego, La Jolla, California 92093-0319
In a new approach, we have fabricated 6:1 aspect ratio magnetic nanocolumns, 60–250 nm in diameter, embedded in a hard aluminum-oxide/gallium-arsenide (Al2O3/GaAs) substrate. The fabrication technique uses the highly selective etching properties of GaAs and AlAs, and highly efficient masking properties of Al2O3 to create small diameter, high aspect ratio holes. Nickel (Ni) is subsequently electroplated into the holes, followed by polishing, which creates a smooth and hard surface appropriate for future reading and writing of the columns as individual bits for high density information storage. We have used magnetic force microscopy and scanning magneto-resistance microscopy to characterize the resulting magnets. We find the columns more magnetically stable than previously achieved with magnets embedded in a SiO2 substrate. Such stability is necessary before further writing of perpendicular patterned media can be demonstrated. ©1999 American Institute of Physics.
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Ss
    Magnetic properties and materials Studies of specific magnetic materials Magnetic recording materials
  • 85.70.Li
    Electronic and magnetic devices; microelectronics Magnetic devices Other magnetic recording and storage devices (including tapes, disks, and drums)
  • 75.50.Cc
    Magnetic properties and materials Studies of specific magnetic materials Other ferromagnetic metals and alloys
  • 85.40.Ux
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Nanometer-scale fabrication technology
  • 75.60.Ej
    Magnetic properties and materials Domain effects, magnetization curves, and hysteresis Magnetization curves, hysteresis, Barkhausen and related effects
  • 81.65.Ps
    Materials science Surface treatments Polishing
  • 81.65.Cf
    Materials science Surface treatments Surface cleaning, etching, patterning
  • 81.15.Pq
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Electrodeposition, electroplating
  • 75.50.Tt
    Magnetic properties and materials Studies of specific magnetic materials Fine-particle systems
  • YEAR: 1999

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (10)

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  1. W. Xu, J. Wong, C. C. Cheng, R. Johnson, and A. Scherer, J. Vac. Sci. Technol. B 13, 2372 (1995).
  2. P. R. Krauss and S. Y. Chou, J. Vac. Sci. Technol. B 13, 2850 (1995).
  3. S. Y. Yamamoto, R. O'Barr, S. Schultz, and A. Scherer, IEEE Trans. Magn. 33, 3016 (1997).
  4. O. J. Painter, C. C. Cheng, and A. Scherer (unpublished).
  5. K. D. Choquette et al., IEEE J. Sel. Top. Quantum Electron. 3, 916 (1997).
  6. R. O'Barr, S. Y. Yamamoto, S. Schultz, W. Xu, and A. Scherer, J. Appl. Phys. 81, 4730 (1997).
  7. Y. Martin and H. K. Wickramasinghe, Appl. Phys. Lett. 50, 1455 (1987).
  8. S. Y. Yamamoto and S. Schultz, Appl. Phys. Lett. 69, 3263 (1996).
  9. D. Rugar, H. J. Mamin, P. Guethner, S. E. Lambert, J. E. Stern, I. McFadyen, and T. Yogy, J. Appl. Phys. 68, 1169 (1990).
  10. D. Rugar, H. J. Mamin, and P. Guethner, Appl. Phys. Lett. 55, 25 (1989).

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