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Comparison of one- and two-photon optical beam-induced current imaging

J. Appl. Phys. 86, 2226 (1999); doi:10.1063/1.371035

Issue Date: 15 August 1999

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Chris Xu and Winfried Denk
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
Optical beam induced current (OBIC) imaging through the backside of integrated circuits was investigated in the wavelength lambda region from 1.15 to 1.26 µm. With a subpicosecond excitation source and approximately 1 mW at the sample, the two-photon contribution to the generated photocurrent dominates at lambda = 1.25 µm but becomes negligible for lambda < 1.18 µm. One-photon- (1P-) and two-photon- (2P-) OBIC images are very different. In the 1P case a strong contribution by scattered light to the carrier generation leads to an edge enhancement effect that is entirely missing when 2P excitation dominates. 2P-OBIC images often show supply-voltage dependent intensity steps that are much sharper than the optical resolution permits. The advantages of 2P-OBIC lie in the spatial confinement of the free carrier generation, a more relevant contrast mechanism, and the promise of a substantial increase in spatial resolution because of the quadratic intensity dependence and the possibility of using silicon solid immersion lenses, which could eventually provide resolution sufficient for circuits made by deep UV lithography. ©1999 American Institute of Physics.
History: Received 15 September 1998; accepted 11 May 1999
Permalink: http://link.aip.org/link/?JAPIAU/86/2226/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.40.-e
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  • 72.40.+w
    Electronic transport in condensed matter Photoconduction and photovoltaic effects
  • 85.40.Qx
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Microcircuit quality, noise, performance, and failure analysis
  • 72.80.Cw
    Electronic transport in condensed matter Conductivity of specific materials Elemental semiconductors
  • YEAR: 1999

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (18)
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