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Flicker noise properties of organic thin-film transistors

J. Appl. Phys. 87, 3381 (2000); doi:10.1063/1.372354

Issue Date: 1 April 2000

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S. Martin, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz, W. Li, A. Passner, and J. A. Rogers
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974-0636
The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. ©2000 American Institute of Physics.
History: Received 27 September 1999; accepted 4 January 2000
Permalink: http://link.aip.org/link/?JAPIAU/87/3381/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices
  • 72.70.+m
    Electronic transport in condensed matter Noise processes and phenomena
  • 73.50.Td
    Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport phenomena in thin films and low-dimensional structures Noise processes and phenomena
  • 84.30.Ng
    Electronics; radiowave and microwave technology; direct energy conversion and storage Electronic circuits Oscillators, pulse generators, and function generators
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (20)
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  1. A. Dodabalapur, L. Torsi, and H. E. Katz, Science 268, 270 (1995).
  2. A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, and J. Rogers, Appl. Phys. Lett. 73, 142 (1998);
    3. H. Sirringhaus, N. Tessler, and R. H. Friend, Science 280, 1741 (1998).
  3. T. N. Jackson, Y. Y. Lin, D. J. Gundlach, and H. Klauk, IEEE J. Sel. Top. Quantum Electron. 4, 100 (1998).
  4. Z. Bao, Synth. Met. (in press).
  5. A. R. Brown, A. Pomp M. Hart, and D. M. de Leeuw, Science 270, 972 (1995).
  6. A. Dodabalapur, J. Baumbach, K. Baldwin, and H. E. Katz, Appl. Phys. Lett. 68, 2264 (1996).
  7. J. Baumbach, A. Dodabalapur, and H. E. Katz, US patent No. 5,625,199.
  8. A. Dodabalapur, J. Laquindanum, H. E. Katz, and Z. Bao, Appl. Phys. Lett. 69, 4227 (1996).
  9. B. Crone, A. Dodabalapur, Y. Y. Lin, R. W. Filas, Z. Bao, R. Sarpeshkar, H. E. Katz, and W. Li, Nature 403, 521 (2000).
  10. W. Li, H. E. Katz, A. J. Lovinger, and J. G. Laquindanum, Chem. Mater. 11, 458 (1999).
  11. Z. Bao, A. Dodabalapur, and A. J. Lovinger, Appl. Phys. Lett. 69, 4108 (1996).
  12. Z. Bao, A. J. Lovinger, and J. Brown, J. Am. Chem. Soc. 120, 207 (1998).
  13. J. A. Rogers, A. Dodabalapur, Z. Bao, and H. E. Katz, Appl. Phys. Lett. 75, 1010 (1999).
  14. M. Valenza, C. Barros, M. Dumas, D. Rigaud, T. Ducourant, N. Szydlo, and H. Lebrun, J. Appl. Phys. 79, 923 (1996);
    15. J. Rhayem, M. Valenza, D. Rigaud, N. Szydlo, and H. Lebrun, 83, 3660 (1998).
  15. J. H. Schon and B. Batlogg, Appl. Phys. Lett. 74, 260 (1999).
  16. A. van der Ziel, Noise in Measurements (Wiley, New York, 1976);
    17. A. L. Mc Whorter, in Semiconductor Surface Physics, edited by R. H. Kingston (University of Pennsylvania Press, Philadelphia, PA, 1957).
  17. C. D. Motchenbacher and J. A. Connelly, Low Noise Electronic System Design (Wiley, New York, 1993).
  18. A. van der Ziel, Proc. IEEE 76, 233 (1988).
  19. L. Torsi, A. Dodabalapur, and H. E. Katz, J. Appl. Phys. 78, 1088 (1995).
  20. Y. Y. Lin, A. Dodabalapur, R. Sarpeshkar, Z. Bao, W. Li, K. Baldwin, V. R. Raju, and H. E. Katz, Appl. Phys. Lett. 74, 2714 (1999).

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