Magnetization-controlled spin transport in DyAs/GaAs layers
J. Appl. Phys. 87, 5170 (2000); doi:10.1063/1.373284
Issue Date: 1 May 2000
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Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and at magnetic fields up to 12 T. The measured magnetoresistances show two distinct peaks at fields around 0.2 and 2.5 T which are believed to arise from the strong spin-disorder scattering occurring at the phase transition boundaries induced by the external magnetic field. An empirical magnetic phase diagram is deduced from the temperature dependence of magnetoresistance, and the anisotropic transport properties are also presented for various magnetic field directions with respect to the current flow. ©2000 American Institute of Physics.
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KEYWORDS and PACS
dysprosium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor epitaxial layers,
magnetoresistance,
magnetisation,
magnetic transitions
- 73.61.Ey
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) IIIV semiconductors - 73.50.Jt
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport phenomena in thin films and low-dimensional structures Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) - 75.60.Ej
Magnetic properties and materials Domain effects, magnetization curves, and hysteresis Magnetization curves, hysteresis, Barkhausen and related effects - 75.70.Ak
Magnetic properties and materials Magnetic films and multilayers Magnetic properties of monolayers and thin films - 75.30.Kz
Magnetic properties and materials Intrinsic properties of magnetically ordered materials Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) - YEAR: 2000
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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