Double tunnel junctions for magnetic random access memory devices
Optimum junction resistance and minimum tunnel magnetoresistance (TMR) ratio required for high density and high performance magnetoresistive random access memory (MRAM) devices with a TMR cell plus fi...
Optimum junction resistance and minimum tunnel magnetoresistance (TMR) ratio required for high density and high performance magnetoresistive random access memory (MRAM) devices with a TMR cell plus fi...
Optical and in situ characterization of plasma oxidized Al for magnetic tunnel junctions
An optical polarization modulation technique was adapted to provide a simple, fast, and flexible method for studying the kinetics and growth characteristics of thin oxide layers, using Al2O3 as an exa...
An optical polarization modulation technique was adapted to provide a simple, fast, and flexible method for studying the kinetics and growth characteristics of thin oxide layers, using Al2O3 as an exa...
Ultraviolet light assisted oxidation for magnetic tunnel junctions
J. Appl. Phys. 87, 6067 (2000); doi:10.1063/1.372614
Issue Date: 1 May 2000
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Recently, ferromagnetic tunnel junctions attracted much interest because they exhibit large magnetoresistance effects up to 
R/R = 40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underlying mechanism can be explained in the framework of the Cabrera–Mott theory of oxidation. With UV assisted oxidation, magnetoresistance ratios of up to 22.5% at room temperature have been obtained in Ni80Fe20–Al(ox)–Co junctions. The resistivities were in the 1k
µm2 range for junctions of 25–400 µm2. Barrier heights obtained by fitting to different theories will be discussed. ©2000 American Institute of Physics.
R/R = 40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underlying mechanism can be explained in the framework of the Cabrera–Mott theory of oxidation. With UV assisted oxidation, magnetoresistance ratios of up to 22.5% at room temperature have been obtained in Ni80Fe20–Al(ox)–Co junctions. The resistivities were in the 1k µm2 range for junctions of 25–400 µm2. Barrier heights obtained by fitting to different theories will be discussed. ©2000 American Institute of Physics.
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Connotea
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del.icio.us
BibSonomy
KEYWORDS and PACS
Permalloy,
aluminium compounds,
cobalt,
magnetic multilayers,
ferromagnetic materials,
tunnelling,
oxidation,
ultraviolet radiation effects,
magnetoresistance
- 75.70.Cn
Magnetic properties and materials Magnetic films and multilayers Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) - 75.50.Cc
Magnetic properties and materials Studies of specific magnetic materials Other ferromagnetic metals and alloys - 75.45.+j
Magnetic properties and materials Macroscopic quantum phenomena in magnetic systems - 81.65.Mq
Materials science Surface treatments Oxidation - 61.80.Ba
Structure of solids and liquids; crystallography Physical radiation effects, radiation damage Ultraviolet, visible, and infrared radiation effects (including laser radiation) - 61.82.Bg
Structure of solids and liquids; crystallography Radiation effects on specific materials Metals and alloys - YEAR: 2000
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
REFERENCES (11)
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