Electronic structure of Ni2MnIn for use in spin injection
J. Appl. Phys. 87, 7064 (2000); doi:10.1063/1.372932
Issue Date: 1 May 2000
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Data and Das [S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990)] proposed an electronic analog to the optoelectronic modulator which would employ spin injection from a ferromagnet into a semiconductor. We investigate the ferromagnetsemiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs. Using a full-potential electronic structure code with a basis set of Slater-type orbitals, we have calculated the band structure of Ni2MnIn. We calculate the spin polarization for each atom. It resides primarily on the Mn atom (3.51), with a small moment (0.31) on the Ni. Interestingly, In has a very small moment (0.04), which is antiferromagnetically coupled to the other atoms. Using a simple model, we estimate the transmittance of minority spins in three high-symmetry directions. ©2000 American Institute of Physics.
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KEYWORDS and PACS
nickel alloys,
manganese alloys,
indium alloys,
band structure,
ferromagnetic materials,
indium compounds,
III-V semiconductors,
semiconductor-metal boundaries,
STO calculations,
electron spin polarisation,
magnetic moments
- 71.20.Be
Electronic structure Electron density of states and band structure of crystalline solids Transition metals and alloys - 75.50.Cc
Magnetic properties and materials Studies of specific magnetic materials Other ferromagnetic metals and alloys - 73.40.Ns
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic transport in interface structures Metalnonmetal contacts - 71.15.Fv
Electronic structure Methods of electronic structure calculations Atomic- and molecular-orbital methods (including tight binding approximation, valence-band method, etc.) - 75.30.Cr
Magnetic properties and materials Intrinsic properties of magnetically ordered materials Saturation moments and magnetic susceptibilities - YEAR: 2000
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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