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Defect identification in GaAs grown at low temperatures by positron annihilation

J. Appl. Phys. 87, 8368 (2000); doi:10.1063/1.373549

Issue Date: 15 June 2000

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J. Gebauer, F. Börner, and R. Krause-Rehberg
Fachbereich Physik, Martin-Luther-Universität Halle-Wittenberg, D-06099 Halle, Germany

T. E. M. Staab
Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland

W. Bauer-Kugelmann, G. Kögel, and W. Triftshäuser
Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577 Neubiberg, Germany

P. Specht, R. C. Lutz, and E. R. Weber
University of California and Lawrence Berkeley Laboratory, Berkeley, California 94720

M. Luysberg
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
We use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LT–GaAs). The vacancies in as-grown LT–GaAs can be identified to be Ga monovacancies, VGa, according to their positron lifetime and annihilation momentum distribution. The charge state of the vacancies is neutral. This is ascribed to the presence of positively charged As<sub>Ga</sub><sup>+</sup> antisite defects in vicinity to the vacancies. Theoretical calculations of the annihilation parameters show that this assignment is consistent with the data. The density of VGa is related to the growth stoichiometry in LT–GaAs, i.e., it increases with the As/Ga beam equivalent pressure (BEP) and saturates at 2×1018 cm–3 for a BEP>=20 and a low growth temperature of 200 °C. Annealing at 600 °C removes VGa. Instead, larger vacancy agglomerates with a size of approximately four vacancies are found. It will be shown that these vacancy clusters are associated with the As precipitates formed during annealing. ©2000 American Institute of Physics.
History: Received 25 October 1999; accepted 13 March 2000
Permalink: http://link.aip.org/link/?JAPIAU/87/8368/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.Ji
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
  • 78.70.Bj
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Interactions of particles and radiation with matter Positron annihilation
  • 71.55.Eq
    Electronic structure Impurity and defect levels III–V semiconductors
  • 81.05.Ea
    Materials science Specific materials: fabrication, treatment, testing and analysis III–V semiconductors
  • YEAR: 2000

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ISSN:
0021-8979 (print)   1089-7550 (online)
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