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Microstructure of sputter-deposited Co/Si multilayer thin films

J. Appl. Phys. 88, 2400 (2000); doi:10.1063/1.1287773

Issue Date: 1 September 2000

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J. M. Fallon, C. A. Faunce, and P. J. Grundy
Joule Physics Laboratory, University of Salford, Salford M5 4WT, United Kingdom
This article presents the results of an investigation by transmission electron microscopy, electron diffraction, x-ray diffraction, and x-ray reflectivity of sputter-deposited Co/Si multilayers. Structures with individual layer thicknesses above about 5 nm retain elemental regions and also some interfacial mixing, but below this thickness very significant intermixing occurs with alloy formation through interdiffusion. Changes in composition in these interfacial regions reveal themselves as a change in atomic arrangement from crystalline to amorphous phases. This can be induced either by increasing the Si or reducing the Co layer thickness, resulting in alloy formation over a limited distance with a variable average composition. A simple model is proposed to explain the observed microstructural changes. ©2000 American Institute of Physics.
History: Received 27 January 2000; accepted 1 June 2000
Permalink: http://link.aip.org/link/?JAPIAU/88/2400/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.65.+g
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
  • 81.15.Cd
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Deposition by sputtering
  • 66.30.Ny
    Transport properties of condensed matter (nonelectronic) Diffusion in solids Chemical interdiffusion; diffusion barriers
  • 68.35.Fx
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solid–solid interfaces Diffusion; interface formation
  • YEAR: 2000

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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REFERENCES (15)
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