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1/f noise in pentacene organic thin film transistors

J. Appl. Phys. 88, 5395 (2000); doi:10.1063/1.1314618

Issue Date: 1 November 2000

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P. V. Necliudov, S. L. Rumyantsev, and M. S. Shur
Rensselaer Polytechnic Institute, Department of Electrical, Computer, and System Engineering, Troy, New York 12180-3590

D. J. Gundlach and T. N. Jackson
Pennsylvania State University, Department of Electrical Engineering, University Park, Pennsylvania 16802
We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal–oxide–semiconductor field-effect transistors. The extracted Hooge parameter alpha, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (alpha-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-contact TFTs. The Hooge parameter values were in the range of 5–20 for the bottom-contact TFTs. We estimated that the contact noise could be comparable to the channel noise for both top-contact and bottom-contact TFTs. ©2000 American Institute of Physics.
History: Received 15 May 2000; accepted 3 August 2000
Permalink: http://link.aip.org/link/?JAPIAU/88/5395/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices
  • 72.70.+m
    Electronic transport in condensed matter Noise processes and phenomena
  • 85.30.De
    Electronic and magnetic devices; microelectronics Semiconductor devices Semiconductor-device characterization, design, and modeling
  • YEAR: 2000

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (22)
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