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Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates

J. Appl. Phys. 90, 915 (2001); doi:10.1063/1.1379563

Issue Date: 15 July 2001

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Soohaeng Cho, A. Majerfeld, and A. Sanz-Hervás
Department of Electrical and Computer Engineering, University of Colorado, CB425, Boulder, Colorado 80309

J. J. Sánchez, J. L. Sánchez-Rojas, and I. Izpura
Departamento Ingeniería Electrónica, E.T.S.I. Telecomunicación, Ciudad Universitaria, 28040 Madrid, Spain
We report an experimental determination of the pyroelectric coefficient for strained InGaAs layers in a pseudomorphic piezoelectric In0.17Ga0.83As/GaAs multiquantum well in a p-i-n diode configuration which was grown on a (111)B GaAs substrate by molecular-beam epitaxy. By analyzing the Franz–Keldysh oscillations in the photoreflectance spectra over the temperature range 11–300 K, we obtained the temperature dependence of the piezoelectric field, from which the temperature variation of the piezoelectric constant e14 was deduced. A linear dependence of e14 with temperature was observed. Therefore, the strain-induced component of the pyroelectric coefficient of (9.3±0.3)×10–7 C/m2 K was determined for this material system. ©2001 American Institute of Physics.
History: Received 19 February 2001; accepted 19 April 2001
Permalink: http://link.aip.org/link/?JAPIAU/90/915/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.70.+a
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Pyroelectric and electrocaloric effects
  • 77.84.Bw
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
  • 78.67.De
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of nanoscale materials and structures Quantum wells
  • 77.65.Ly
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electromechanical effects Strain-induced piezoelectric fields
  • 68.65.Fg
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties Quantum wells
  • 78.40.Fy
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Absorption and reflection spectra: visible and ultraviolet Semiconductors
  • 85.30.Kk
    Electronic and magnetic devices; microelectronics Semiconductor devices Junction diodes
  • 81.07.St
    Materials science Nanoscale materials and structures: fabrication and characterization Quantum wells
  • YEAR: 2001

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (15)
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