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Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
The thermal stability, microstructure, and electrical properties of xZrO2·(100–x)SiO2 (ZSO) and xHfO2·(100–x)SiO2 (HSO) (x = 15%, 25%, 50%, and 75%) binary oxides were evaluated to...
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Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition
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Molecular beam epitaxy control of the structural, optical, and electronic properties of ScN(001)

J. Appl. Phys. 90, 1809 (2001); doi:10.1063/1.1388161

Issue Date: 15 August 2001

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Arthur R. Smith, Hamad A. H. AL-Brithen, and David C. Ingram
Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701

Daniel Gall
Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801
Scandium nitride (001) oriented layers have been grown on magnesium oxide (001) substrates by molecular beam epitaxy using a rf-plasma source and a scandium effusion cell. The Sc/N flux ratio is found to be critical in determining the structural, optical, and electronic properties of the grown epitaxial layers. A distinct transition occurs at the point where the Sc/N flux ratio equals 1, which defines the line between N-rich and Sc-rich growth. Under N-rich conditions, the growth is epitaxial, and the surface morphology is characterized by a densely packed array of square-shaped plateaus and four-faced pyramids with the terraces between steps being atomically smooth. The films are stoichiometric and transparent with a direct optical transition at 2.15 eV. Under Sc-rich conditions, the growth is also epitaxial, but the morphology is dominated by spiral growth mounds. The morphology change is consistent with increased surface diffusion due to a Sc-rich surface. Excess Sc leads to understoichiometric layers with N vacancies which act as donors. The increased carrier density results in an optical reflection edge at 1 eV, absorption below the 2.15 eV band gap, and a drop in electrical resistivity. ©2001 American Institute of Physics.
History: Received 14 March 2001; accepted 1 June 2001
Permalink: http://link.aip.org/link/?JAPIAU/90/1809/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Hi
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy
  • 78.66.Li
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films Other semiconductors
  • 52.77.Dq
    Physics of plasmas and electric discharges Plasma applications Plasma-based ion implantation and deposition
  • 68.35.Bs
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Structure of clean surfaces (reconstruction)
  • 78.20.Ci
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of bulk materials and thin films Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
  • 68.35.Fx
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Diffusion; interface formation
  • 61.72.Ji
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
  • 72.20.Fr
    Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators Low-field transport and mobility; piezoresistance
  • 73.61.Le
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films Other inorganic semiconductors
  • 72.80.Ga
    Electronic transport in condensed matter Conductivity of specific materials Transition-metal compounds
  • YEAR: 2001

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (33)
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