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Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy

J. Appl. Phys. 90, 5915 (2001); doi:10.1063/1.1416140

Issue Date: 15 December 2001

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Matthew C. Beard, Gordon M. Turner, and Charles A. Schmuttenmaer
Chemistry Department, Yale University, 225 Prospect Street, P.O. Box 208107, New Haven, Connecticut 06520-8107
The transient photoconductivity in a 1 µm layer of low temperature grown GaAs (LT-GaAs) on a GaAs substrate was measured using time-resolved terahertz spectroscopy. When photoexcitation occurs at 400 nm we find a time-dependent mobility that increases from 400±100 to 1100±100  cm2 V–1 s–1 with a time constant of 2 ps. Photoexcitation at 800 nm produces a time-independent mobility of 3000±500  cm2 V–1 s–1. We determine the carrier lifetime in LT-GaAs to be 1.1 ± 0.1 ps. ©2001 American Institute of Physics.
History: Received 23 March 2001; accepted 10 September 2001
Permalink: http://link.aip.org/link/?JAPIAU/90/5915/1
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Supplemental Material

KEYWORDS and PACS

Keywords
PACS
  • 72.80.Ey
    Electronic transport in condensed matter Conductivity of specific materials III–V and II–VI semiconductors
  • 72.40.+w
    Electronic transport in condensed matter Photoconduction and photovoltaic effects
  • 72.20.Jv
    Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators Charge carriers: generation, recombination, lifetime, and trapping
  • 78.47.+p
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
  • 72.20.Ee
    Electronic transport in condensed matter Conductivity phenomena in semiconductors and insulators Mobility edges; hopping transport
  • 78.70.Gq
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Interactions of particles and radiation with matter Microwave and radio-frequency interactions
  • YEAR: 2001

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (42)
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For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, NJ, 1971).
  2. S. E. Ralph, Y. Chen, J. Woodall, and D. McInturff, Phys. Rev. B 54, 5568 (1996).
  3. M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, Phys. Rev. B 62, 15764 (2000).
  4. J. Linnros, J. Appl. Phys. 84, 275 (1998).
  5. M. Melloch, J. Woodall, E. Harmon, N. Otsuka, F. Pollak, D. Nolte, R. Feenstra, and M. Lutz, Annu. Rev. Mater. Sci. 25, 547 (1995).
  6. H. Wang and J. Whitaker, J. Electron. Mater. 22, 1461 (1993).
  7. E. Harmon, M. Melloch, J. Woodall, D. Nolte, N. Otsuka, and C. Chang, Appl. Phys. Lett. 63, 2248 (1993).
  8. Z. Liliental-Weber, H. Cheng, S. Gupta, J. Whitaker, K. Nichols, and F. Smith, J. Electron. Mater. 22, 1465 (1993).
  9. D. You, R. R. Jones, P. H. Bucksbaum, and D. R. Dykaar, Opt. Lett. 18, 290 (1993).
  10. A. Rice, Y. Jin, X. F. Ma, X. C. Zhang, D. Bliss, J. Larkin, and M. Alexander, Appl. Phys. Lett. 64, 1324 (1994).
  11. Q. Wu, M. Litz, and X. C. Zhang, Appl. Phys. Lett. 68, 2924 (1996).
  12. A. Nahata, A. S. Weling, and T. F. Heinz, Appl. Phys. Lett. 69, 2321 (1996).
  13. G. Gallot, J. Q. Zhang, R.W. McGowan, T. I. Jeon, and D. Grischkowsky, Appl. Phys. Lett. 74, 3450 (1999).
  14. G. Gallot and D. Grischkowsky, J. Opt. Soc. Am. B 16, 1204 (1999).
  15. H. J. Bakker, G. C. Cho, H. Kurz, Q. Wu, and X. C. Zhang, J. Opt. Soc. Am. B 15, 1795 (1998).
  16. D. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1982).
  17. See EPAPS Document No. E-JAPIAU-90-069124 for additional details about the collection and analysis of data in TRTS experiments. This document may be retrieved via the EPAPS homepage (http://www.aip.org/pubservs/epaps.html) or from ftp.aip.org in the directory /epaps/; see the EPAPS homepage for more information. [EPAPS]
  18. Landolt-Börnstein, edited by K.-H. Hellwege and O. Madelung, Vol. 17a Semicondutors, Physics of Group IV Elements and III-V Compounds, (Springer-Verlag, New York, 1982).
  19. C. J. Stanton and D. W. Bailey, Phys. Rev. B 45, 8369 (1992).
  20. See EPAPS Document No. E-JAPIAU-90-069124 for a color version of Fig. 2 that also includes a comparison to DeltaOD and Deltaphi, as well as color versions of Figs. 3 and 8. This document may be retrieved via the EPAPS homepage (http://www.aip.org/pubservs/epaps.html) or from ftp.aip.org in the directory /epaps/; see the EPAPS homepage for more information. [EPAPS]
  21. N. Ashcroft and N. Mermin, Solid State Physics (Saunders College Publishing, New York, 1976).
  22. E. Abramof and A. da Silva, Phys. Rev. B 55, 9584 (1997).
  23. K. S. Cole and R. H. Cole, J. Chem. Phys. 9, 341 (1941).
  24. T. I. Jeon and D. Grischkowsky, Phys. Rev. Lett. 78, 1106 (1997).
  25. T. I. Jeon and D. Grischkowsky, Appl. Phys. Lett. 72, 2259 (1998).
  26. C. Böttcher and P. Bordewijk, Theory of Electric Polarization, 2nd ed. (Elsevier, New York, 1978), Vol. 2.
  27. W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes in Fortran, 2nd ed. (Cambridge University Press, New York, 1986).
  28. D. McQuarrie, Statistical Mechanics (Harper Collins, New York, 1976).
  29. M. C. Beard and C. A. Schmuttenmaer, J. Chem. Phys. 114, 2903 (2001).
  30. N. Atique, E. Harmon, J. Chang, J. Woodall, M. Melloch, and N. Otsuka, J. Appl. Phys. 77, 1471 (1995).
  31. G. Segschneider, T. Dekorsy, H. Kurz, R. Hey, and K. Ploog, Appl. Phys. Lett. 71, 2779 (1997).
  32. A. Othonos, Appl. Phys. Lett. 83, 1789 (1998).
  33. P. Langot, N. Del Fatti, D. Christofilos, R. Tommasi, and F. Valleé, Phys. Rev. B 54, 14487 (1996).
  34. H. van Driel, Phys. Rev. B 19, 5928 (1979).
  35. J. Shah, Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures (Springer, New York, 1999).
  36. H. P. M. Pellemans and P. C. M. Planken, Phys. Rev. B 57, R4222 (1998).
  37. P. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 1996).
  38. P. Butcher and D. Cotter, The Elements of Nonlinear Optics (Cambridge University Press, Cambridge, 1990).
  39. B. Jensen, Ann. Phys. (N.Y.) 80, 284 (1973).
  40. B. Jensen, Ann. Phys. (N.Y.) 95, 229 (1975).
  41. B. Jensen, Solid State Commun. 24, 853 (1977).
  42. B. Jensen, J. Appl. Phys. 50, 5800 (1979).

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