1/f noise in pentacene and poly-thienylene vinylene thin film transistors
J. Appl. Phys. 91, 719 (2002); doi:10.1063/1.1423389
Issue Date: 15 January 2002
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We investigate low frequency conductivity noise in the drain-source channel of organic material field-effect transistors by measuring the spectra of current fluctuations for several values of the gate voltage Vgs and drain voltage Vds and find that it is 1/f. The samples are biased in the ohmic range of the applied Vds. The relative current 1/f noise is inversely proportional to the charge carrier numbers N generated by illumination or by varying the gate-source voltage. Hooge's empirical relation for the 1/f noise is validated for these organic semiconductors with an 
0.01 for poly-thienylene vinylene and about 100 for pentacene thin film transistors. From geometry dependence of the noise we conclude that series resistance can be ignored for poly-thienylene vinylene field-effect transistors. However, some pentacene samples suffer from a noisy series resistance to the channel resistance. From the 1/f noise dependence on geometry and gate voltage bias we conclude that it can be used as a diagnostic tool for device quality assessment. ©2002 American Institute of Physics.

0.01 for poly-thienylene vinylene and about 100 for pentacene thin film transistors. From geometry dependence of the noise we conclude that series resistance can be ignored for poly-thienylene vinylene field-effect transistors. However, some pentacene samples suffer from a noisy series resistance to the channel resistance. From the 1/f noise dependence on geometry and gate voltage bias we conclude that it can be used as a diagnostic tool for device quality assessment. ©2002 American Institute of Physics.
| History: | Received 25 June 2001; accepted 5 October 2001 |
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KEYWORDS and PACS
conducting polymers,
organic semiconductors,
thin film transistors,
1/f noise,
semiconductor device noise,
current fluctuations,
semiconductor device measurement,
carrier density
- 85.30.Tv
Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices - 72.70.+m
Electronic transport in condensed matter Noise processes and phenomena - 73.50.Td
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Noise processes and phenomena - 85.30.De
Electronic and magnetic devices; microelectronics Semiconductor devices Semiconductor-device characterization, design, and modeling - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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