Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Structural and thermoelectric transport properties of Sb2Te3 thin films grown by molecular beam epitaxy
We have studied the structural and transport properties of Sb2Te3 thin films prepared by molecular beam epitaxy as a function of the Te/Sb flux ratio during deposition. Both the crystallinity and the ...
Next Article
Role of interface optical phonons in magnetotunneling in asymmetric double-barrier structures
The role of interface-optical (IO) phonons in tunneling through an asymmetric double barrier structure in a magnetic field perpendicular to the barriers is studied. The phonon-assisted tunneling curre...

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

J. Appl. Phys. 91, 719 (2002); doi:10.1063/1.1423389

Issue Date: 15 January 2002

You are not logged in to this journal. Log in

L. K. J. Vandamme, R. Feyaerts, and Gy. Trefán
Department of Electrical Engineering EH 5.15, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

C. Detcheverry
Philips Research Laboratories, 5656 AA Eindhoven, The Netherlands
We investigate low frequency conductivity noise in the drain-source channel of organic material field-effect transistors by measuring the spectra of current fluctuations for several values of the gate voltage Vgs and drain voltage Vds and find that it is 1/f. The samples are biased in the ohmic range of the applied Vds. The relative current 1/f noise is inversely proportional to the charge carrier numbers N generated by illumination or by varying the gate-source voltage. Hooge's empirical relation for the 1/f noise is validated for these organic semiconductors with an alpha~=0.01 for poly-thienylene vinylene and about 100 for pentacene thin film transistors. From geometry dependence of the noise we conclude that series resistance can be ignored for poly-thienylene vinylene field-effect transistors. However, some pentacene samples suffer from a noisy series resistance to the channel resistance. From the 1/f noise dependence on geometry and gate voltage bias we conclude that it can be used as a diagnostic tool for device quality assessment. ©2002 American Institute of Physics.
History: Received 25 June 2001; accepted 5 October 2001
Permalink: http://link.aip.org/link/?JAPIAU/91/719/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (68 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices
  • 72.70.+m
    Electronic transport in condensed matter Noise processes and phenomena
  • 73.50.Td
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Noise processes and phenomena
  • 85.30.De
    Electronic and magnetic devices; microelectronics Semiconductor devices Semiconductor-device characterization, design, and modeling
  • YEAR: 2002

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (22)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. E. Cantatore, Proceedings of the SAFE/IEEE workshop. STW, 2000, pp. 27–31.
  2. C. Detcheverry and M. Matters, Proceedings of the ESSDERC, Cork, Ireland, 2000, pp. 328–331.
  3. A. R. Brown, D. M. Leeuw, E. E. Havinga, and A. Pomp, Synth. Met. 68, 65 (1994).
  4. S. Martin, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz, W. Li, A. Passner, and J. A. Rogers, J. Appl. Phys. 87, 3381 (2000).
  5. P. Bruschi, A. Nannini, G. Serra, and E. Stussi, Thin Solid Films 289, 242 (1996).
  6. P. V. Necliudov, S. L. Rumyantsev, M. S. Shur, D. J. Gundlach, and T. N. Jackson, J. Appl. Phys. 88, 5395 (2000).
  7. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 479 (1981).
  8. L. K. J. Vandamme and G. Trefán, IEE Proc. Circuits (to be published).
  9. E. G. Guk, N. V. D'yakonova, and M. E. Levinshtein, Sov. Phys. Semicond. 22, 707 (1988).
  10. N. V. D'yakonova, M. E. Levinshtein, and S. L. Rumyantsev, Sov. Phys. Semicond. 22, 661 (1988).
  11. F. Hofman and R. J. J. Zijlstra, Solid State Commun. 72, 1163 (1989).
  12. M. J. Deen, O. Marinov, J. Yu, S. Holdcroft, and W. Woods, IEEE Trans. Electron Devices 48, 1688 (2001).
  13. J. H. Schön, Synth. Met. 122, 157 (2001).
  14. E. P. Vandamme and L. K. J. Vandamme, Microelectron. Reliab. 40, 1847 (2000).
  15. L. K. J. Vandamme, Appl. Phys. 11, 89 (1976).
  16. L. K. J. Vandamme, IEEE Trans. Electron Devices 41, 2176 (1994).
  17. J. M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, IEEE Trans. Electron Devices 37, 2250 (1990).
  18. X. Li and L. K. J. Vandamme, Solid-State Electron. 35, 1471 (1992).
  19. F. N. Hooge and L. K. J. Vandamme, Phys. Lett. 66A, 315 (1978).
  20. L. K. J. Vandamme, S. Kibeya, B. Orsal, and R. Alabedra, AIP Conf. Proc. 285, 324 (1993).
  21. L. K. J. Vandamme, X. Li, and D. Rigaud, IEEE Trans. Electron Devices 41, 1936 (1994).
  22. E. P. Vandamme, L. K. J. Vandamme, C. Claeys, E. Simoen, and R. J. Schreutelkamp, Solid-State Electron. 38, 1893 (1995).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.