Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
   
 
 
 
Previous Article
Lattice site location of ion-implanted 8Li in Silicon Carbide
The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and...
Next Article
Epitaxial SnO2 thin films grown on (1-bar 012) sapphire by femtosecond pulsed laser deposition
An ultrafast (100 fs) Ti sapphire laser (780 nm) was used for the deposition of SnO2 thin films. The laser-induced plasma generated from the SnO2 target was characterized by optical emission spectrosc...

Crystalline phase and orientation control of manganese nitride grown on MgO(001) by molecular beam epitaxy

J. Appl. Phys. 91, 1053 (2002); doi:10.1063/1.1425435

Issue Date: 1 February 2002

You are not logged in to this journal. Log in

Haiqiang Yang, Hamad Al-Brithen, Eugen Trifan, David C. Ingram, and Arthur R. Smith
Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701
The phase and orientation of manganese nitride grown on MgO(001) using molecular beam epitaxy are shown to be controllable by the manganese/nitrogen flux ratio as well as the substrate temperature. The most N-rich phase, theta phase (MnN), is obtained at very low Mn/N flux ratio. At increased Mn/N flux ratio, the next most N-rich phase, the eta phase (Mn3N2), is obtained having its c axis normal to the surface plane. Further increasing the Mn/N flux ratio, the eta phase (Mn3N2) having its c axis in the surface plane is obtained. Finally, the epsilon phase (Mn4N) is obtained at yet higher Mn/N flux ratio. The structural phase variation with Mn/N flux ratio is due to the kinetic control of the surface chemical composition, which determines the energetically most favorable phase. For a given Mn/N flux ratio, the phase is also found to be a function of the substrate temperature, with the less N-rich phase occurring at the higher substrate temperature. The change of phase with temperature is attributed to the change in the chemical composition resulting from the diffusion of N vacancies. Since the magnetic properties of MnxNy depend on the phase, the Mn/N flux ratio provides a way of directly controlling the magnetic properties. A phase diagram for molecular beam epitaxial growth is presented. ©2002 American Institute of Physics.
History: Received 19 July 2001; accepted 15 October 2001
Permalink: http://link.aip.org/link/?JAPIAU/91/1053/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (291 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.55.Jk
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Thin film structure and morphology Structure and morphology; thickness; crystalline orientation and texture
  • 81.15.Hi
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy
  • 75.50.Ee
    Magnetic properties and materials Studies of specific magnetic materials Antiferromagnetics
  • 75.70.Ak
    Magnetic properties and materials Magnetic properties of thin films, surfaces, and interfaces Magnetic properties of monolayers and thin films
  • 61.72.Ji
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
  • 64.70.-p
    Equations of state, phase equilibria, and phase transitions Specific phase transitions
  • YEAR: 2002

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (32)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. P. Dismukes, W. M. Yim, and V. S. Ban, J. Cryst. Growth 13/14, 365 (1972).
  2. T. D. Moustakas, R. J. Molnar, and J. P. Dismukes, Proc.-Electrochem. Soc. 96-11, 197 (1996).
  3. D. Gall, I. Petrov, P. Desjardins, and J. E. Greene, J. Appl. Phys. 86, 5524 (1999).
  4. D. Gall, I. Petrov, N. Hellgren, L. Hultman, J. E. Sundgren, and J. E. Greene, J. Appl. Phys. 84, 6034 (1998).
  5. H. A. H. Al-Brithen and A. R. Smith, Appl. Phys. Lett. 77, 2485 (2000).
  6. A. R. Smith, H. A. H. Al-Brithen, D. C. Ingram, and D. Gall, J. Appl. Phys. 90, 1809 (2001).
  7. S. Yang, D. B. Lewis, I. Wadsworth, J. Cawley, J. S. Brooks, and W. D. Munz, Surf. Coat. Technol. 131, 228. (2000);
    8. K. Inumaru, T. Ohara, and S. Yamanaka, Appl. Surf. Sci. 158, 375 (2000).
  8. G. Kreiner and H. Jacobs, J. Alloys Compd. 183, 345 (1992).
  9. K. Suzuki, T. Kaneko, H. Yoshida, Y. Obi, H. Fujimori, and H. Morita, J. Alloys Compd. 306, 66 (2000).
  10. K. Suzuki, H. Morita, T. Kandeko, H. Yoshida, and H. Fujimori, J. Alloys Compd. 201, 11 (1993).
  11. K. Suzuki, T. Kaneko, H. Yoshida, H. Morita, and H. Fujimori, J. Alloys Compd. 224, 232 (1995).
  12. H. Ohno, Science 281, 951 (1998).
  13. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
  14. H. Ohno, Science 281, 951 (1998).
  15. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London) 402, 790 (1999).
  16. F. Lihl, P. Ettmayer, and A. Kutzelnigg, Z. Metallkd. 53, 715 (1962).
  17. N. Otsuka, Y. Hanawa, and S. Nagakura, Phys. Status Solidi A 43, K127 (1977).
  18. M. Tabuchi, M. Takahashi, and F. Kanamaru, J. Alloys Compd. 210, 143 (1994).
  19. A. Leineweber, R. Niewa, H. Jacobs, and W. Kockelmann, J. Mater. Chem. 10, 2827 (2000).
  20. H. Jacobs and C. Stuve, J. Less-Common Met. 96, 323 (1984).
  21. G. W. Wiener and J. A. Berger, J. Met. 7, 360 (1955).
  22. W. J. Takei, R. R. Heikes, and G. Shirane, Phys. Rev. 125, 1893 (1962).
  23. M. Mekata, J. Phys. Soc. Jpn. 17, 796 (1962).
  24. M. Mekata, J. Haruna, and H. Takei, J. Phys. Soc. Jpn. 25, 234 (1968).
  25. H. Q. Yang, H. Al-Brithen, A. R. Smith, J. A. Borchers, R. L. Cappelletti, and M. D. Vaudin, Appl. Phys. Lett. 78, 3860 (2001).
  26. Inorganic Index to Powder Diffraction File (Joint Committee on Powder Diffraction Standards, International Center for Powder Diffraction Data, Swarthmore, PA, 1997) MgO Card No. 04-0820.
  27. H. Landolt and R. Börnstein, Numerical Data and Functional Relationships in Science and Technology, Group III (Springer, Berlin, 1975), Vol. 7, Pt. B1, p. 27.
  28. K. M. Ching, W. D. Chang, and T. S. Chin, J. Alloys Compd. 222, 184 (1995).
  29. Because it is impractical to grow samples at every Mn/N flux ratio, we only give a flux ratio range within which the change occurs.
  30. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 344 (1985).
  31. F.-K. Men, A. R. Smith, K.-J. Chao, Z. Zhang, and C.-K. Shih, Phys. Rev. B 52, R8650 (1995).
  32. Professor Y. Ijiri, Oberlin College, Oberlin, OH (unpublished results).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics