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Dielectric and optical properties of BaTiO3/SrTiO3 and BaTiO3/BaZrO3 superlattices
BaTiO3 (BTO)/SrTiO3 (STO), and BaTiO3/BaZrO3 (BZO) artificial superlattices were fabricated by the molecular beam epitaxy process and their dielectric properties and refractive indices were measured. ...
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Enhancement of remanent polarization in epitaxial BaTiO3/SrTiO3 superlattices with "asymmetric" structure

J. Appl. Phys. 91, 2290 (2002); doi:10.1063/1.1434547

Issue Date: 15 February 2002

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Toru Shimuta, Osamu Nakagawara, Takahiro Makino, and Seiichi Arai
Murata Manufacturing Company, Ltd., 2-26-10 Tenjin, Nagaokakyo, Kyoto 617-8555, Japan

Hitoshi Tabata and Tomoji Kawai
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Enhancement of remanent polarization has been demonstrated in epitaxial "asymmetric" BaTiO3/SrTiO3 strained superlattices, in which the thickness ratio of BaTiO3 to SrTiO3 layers is changed at molecular layer order accuracy. The superlattices have been prepared on Nb-doped SrTiO3 (100) single-crystal substrates by a pulsed-laser deposition technique. The superlattice with a stacking periodicity of 15 unit cells BaTiO3/3 unit cells SrTiO3 shows the largest remanent polarization 2Pr of 46 µC/cm2, which is about three times that of the BaTiO3 single-phase film formed under the same condition. The increase in the remanent polarization is attributed both to the BaTiO3-rich structure and to the increase in lattice parameter c due to the mismatch of in-plane lattice parameters between BaTiO3 and SrTiO3. ©2002 American Institute of Physics.
History: Received 28 June 2001; accepted 19 November 2001
Permalink: http://link.aip.org/link/?JAPIAU/91/2290/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.22.Ej
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Dielectric properties of solids and liquids Polarization and depolarization
  • 77.84.Dy
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials Niobates, titanates, tantalates, PZT ceramics, etc.
  • 81.05.Je
    Materials science Specific materials: fabrication, treatment, testing and analysis Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
  • 77.55.+f
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Dielectric thin films
  • 68.65.Cd
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties Superlattices
  • 77.80.-e
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Ferroelectricity and antiferroelectricity
  • YEAR: 2002

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ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (15)
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  1. K. Kämmer, B. Holzapfel, H. Hülz, W. Hässler, and L. Schultz, Ferroelectrics 201, 65 (1997).
  2. T. Tsurumi, S. Mitarai, S.-M. Nam, Y. Ishibashi, and O. Fukunaga, Proceedings of the 10th International IEEE Symposium on Appl. Ferroelectrics (1996), Vol. 1, p. 499 (unpublished).
  3. Y. Yano, K. Iijima, Y. Daitoh, T. Terashima, Y. Bando, Y. Watanabe, H. Kasatani, and H. Tarauchi, J. Appl. Phys. 76, 7833 (1994).
  4. T. Shimizu and T. Kawakubo, Jpn. J. Appl. Phys., Part 2 37, L235 (1998).
  5. Y. Yoneda, T. Okabe, K. Sakaue, H. Terauchi, H. Kasatani, and K. Deguchi, J. Appl. Phys. 83, 2458 (1998).
  6. K. Abe, N. Yanase, S. Komatsu, K. Sano, N. Fukushima, and T. Kawakubo, IEICE Trans. Electron. E81-C, 505 (1998).
  7. T. Kawakubo, S. Komatsu, K. Abe, K. Sano, N. Yanase, and N. Fukushima, Jpn. J. Appl. Phys., Part 1 37, 5108 (1998).
  8. K. Abe and S. Komatsu, J. Appl. Phys. 77, 6461 (1995).
  9. H. Tabata, H. Tanaka, and T. Kawai, Appl. Phys. Lett. 65, 1970 (1994).
  10. O. Nakagawara, T. Shimuta, T. Makino, and S. Arai, Appl. Phys. Lett. 77, 3257 (2000).
  11. H. Tabata and T. Kawai, Appl. Phys. Lett. 70, 321 (1997).
  12. G.-Z. Yang, H.-B. Lu, Y.-L. Zhou, Z.-L. Lei, and Z.-H. Chen, Acta Phys. Sin. 7, 623 (1998).
  13. K. Iijima, T. Terashima, Y. Bando, K. Kamigaki, and H. Tarauchi, J. Appl. Phys. 72, 2840 (1992).
  14. Z. Wang, T. Yasuda, S. Hatatani, and S. Oda, Proceedings of the Electrochemical Society of Honolulu Meeting, Abstract No. 1054 (1999) (unpublished).
  15. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, and H. Koinuma, Science 266, 1540 (1994).

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