Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Properties of a hole trap in n-type hexagonal GaN
Minority carrier transient spectroscopy is performed in Schottky diodes fabricated on hexagonal n-type GaN grown by metalorganic chemical vapor deposition, either doped with two concentrations of Si o...
Next Article
Shock wave demagnetization of BaFe12O19 hard ferrimagnetics
A study of the effect of shock waves on the phase state of a hard ferrimagnetic material has been performed. A plane shock wave was passed along the axis of a cylindrical BaFe12O19 hard ferrite magnet...

Confirmation of the pyroelectric coefficient of strained InxGa1–xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy

J. Appl. Phys. 91, 3002 (2002); doi:10.1063/1.1445278

Issue Date: 1 March 2002

You are not logged in to this journal. Log in

J. J. Sánchez and J. I. Izpura
Departamento de Ingeniería Electrónica, Escuela Técnica Superior de Ingenieros de Telecomunicación–UPM, Ciudad Universitaria s/n, 28040 Madrid, Spain

J. M. G. Tijero
Departamento de Física Aplicada, Escuela Téchnica Superior de Arquitectura–UPM, Ciudad Universitaria s/n, 28040 Madrid, Spain

E. Muñoz
Departamento de Ingeniería Electrónica, Escuela Técnica Superior de Ingenieros de Telecomunicación–UPM, Ciudad Universitaria s/n, 28040 Madrid, Spain

Soohaeng Cho and A. Majerfeld
Department of Electrical and Computer Engineering, University of Colorado, CB425, Boulder, Colorado 80309
In this work we used the differential photocurrent technique to measure the strain-induced piezoelectric field in pseudomorphic InxGa1–xAs/GaAs heterostructures grown by molecular beam epitaxy on (111)B GaAs substrates. Single and multiple quantum well p–i–n diodes with two different In fractions in the well were analyzed in the temperature range of 25–300 K. Our results for a sample with a 17% In fraction confirm the previously reported value of the pyroelectric coefficient for a similar sample obtained by photoreflectance spectroscopy, hence, the equivalence of the differential photocurrent and photoreflectance techniques is also demonstrated. For a sample with 21% In, we report experimental determination of the temperature dependence of the piezoelectric constant and, therefore, of the strain-induced component of the pyroelectric coefficient. ©2002 American Institute of Physics.
History: Received 11 September 2001; accepted 28 November 2001
Permalink: http://link.aip.org/link/?JAPIAU/91/3002/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (68 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 77.70.+a
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Pyroelectric and electrocaloric effects
  • 73.63.Hs
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in mesoscopic or nanoscale materials and structures Quantum wells
  • 77.65.Ly
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electromechanical effects Strain-induced piezoelectric fields
  • 73.50.Pz
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Photoconduction and photovoltaic effects
  • 77.65.Bn
    Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electromechanical effects Piezoelectric and electrostrictive constants
  • 81.15.Hi
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2002

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (17)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. K. Nishi and T. Anan, J. Appl. Phys. 70, 5004 (1991).
  2. A. S. Pabla, J. Woodhead, E. A. Khoo, R. Grey, J. P. R. David, and G. J. Rees, Appl. Phys. Lett. 68, 1595 (1996).
  3. J. L. Sánchez-Rojas, A. Sacedón, E. Calleja, E. Muñoz, A. Sanz-Hervás, G. de Benito, and M. López, Phys. Rev. B 53, 15469 (1996).
  4. D. L. Smith, Solid State Commun. 57, 919 (1986).
  5. E. A. Caridi, T. Y. Chang, K. W. Goossen, and L. F. Eastman, Appl. Phys. Lett. 56, 659 (1990).
  6. J. L. Sánchez-Rojas, A. Sacedón, F. Calle, E. Calleja, and E. Muñoz, Appl. Phys. Lett. 65, 2214 (1994).
  7. J. Y. Nye, Physical Properties of Crystals (Oxford University Press, New York, 1985).
  8. T. B. Bahder, R. L. Tober, and J. D. Bruno, Superlattices Microstruct. 14, 149 (1993).
  9. T. B. Bahder, R. L. Tober, and J. D. Bruno, Phys. Rev. B 50, 2731 (1994).
  10. C. H. Chan, Y. F. Chen, M. C. Chen, H. H. Lin, G. J. Jan, and Y. H. Chen, J. Appl. Phys. 84, 1595 (1998).
  11. P. Ballet, P. Disseix, J. Leymarie, A. Vasson, M. Vasson, and R. Grey, Thin Solid Films 336, 354 (1998).
  12. S. Cho, A. Majerfeld, A. Sanz-Hervás, J. J. Sánchez, J. L. Sánchez-Rojas, and I. Izpura, J. Appl. Phys. 90, 915 (2001).
  13. R. L. Tober, W. Q. Li, and P. K. Bhattacharya, J. Appl. Phys. 71, 3506 (1992).
  14. A. Sacedón, F. Calle, A. L. Álvarez, E. Calleja, E. Muñoz, R. Beandland, and P. Goodhew, Appl. Phys. Lett. 65, 3212 (1994).
  15. I. Izpura, J. J. Sánchez, J. L. Sánchez-Rojas, and E. Muñoz, Microelectron. J. 30, 439 (1998).
  16. R. L. Tober and T. B. Badher, Appl. Phys. Lett. 63, 2369 (1993).
  17. J. L. Sánchez-Rojas, A. Sacedón, F. González-Sanz, E. Calleja, and E. Muñoz, Appl. Phys. Lett. 65, 2042 (1994).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics