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Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

J. Appl. Phys. 91, 6729 (2002); doi:10.1063/1.1454187

Issue Date: 15 May 2002

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X. L. Sun and S. H. Goss
Department of Electrical Engineering, Ohio State University, 205 Dreese Lab, 2015 Neil Avenue, Columbus, Ohio 43210

L. J. Brillson
Department of Electrical Engineering, Center for Materials Research, and Department of Physics, Ohio State University, 205 Dreese Lab, 2015 Neil Avenue, Columbus, Ohio 43210

D. C. Look
Semiconductor Research Center, Wright State University, Dayton, Ohio 45435

R. J. Molnar
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420
Cathodoluminescence (CL) imaging and temperature-dependent cathodoluminescence spectroscopy (CLS) have been used to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy imaging, CLS, and CL imaging show systematic variations in defect emissions with a wide range of HVPE GaN/sapphire electronic properties. These data, along with electrochemical capacitance–voltage profiling and secondary ion mass spectrometry provide a consistent picture of near-interface doping by O out-diffusion from Al2O3 into GaN over hundreds of nanometers. Low-temperature CL spectra exhibit a new donor level at 3.447 meV near the interface for such samples, characteristic of O impurities spatially localized to the nanoscale interface. CLS emissions indicate the formation of amorphous Al–N–O complexes at 3.8 eV extending into the Al2O3 near the GaN/sapphire interface. CLS and CL images also reveal emissions due to excitons bound to stacking faults and cubic phase GaN. The temperature dependence of the various optical transitions in the 10–300 K range provides additional information to identify the near interface defects and impurity doping. ©2002 American Institute of Physics.
History: Received 3 August 2001; accepted 2 January 2002
Permalink: http://link.aip.org/link/?JAPIAU/91/6729/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.Ln
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Thin film structure and morphology Defects and impurities: doping, implantation, distribution, concentration, etc.
  • 78.60.Hk
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Other luminescence and radiative recombination Cathodoluminescence, ionoluminescence
  • 61.72.Ss
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Impurity concentration, distribution, and gradients
  • 61.72.Vv
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Doping and impurity implantation in III–V and II–VI semiconductors
  • 71.55.Eq
    Electronic structure of bulk materials Impurity and defect levels III–V semiconductors
  • 78.66.Fd
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films III–V semiconductors
  • 79.20.Rf
    Electron and ion emission by liquids and solids; impact phenomena Impact phenomena (including electron spectra and sputtering) Atomic, molecular, and ion beam impact and interactions with surfaces
  • 61.72.Nn
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Stacking faults and other planar or extended defects
  • 71.35.-y
    Electronic structure of bulk materials Excitons and related phenomena
  • 82.80.Fk
    Physical chemistry and chemical physics Chemical analysis and related physical methods of analysis Electrochemical methods
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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