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Evidence for a large enrichment of interstitial oxygen atoms in the nanometer-thick metal layer at the NbO/Nb (110) interface

J. Appl. Phys. 91, 9319 (2002); doi:10.1063/1.1473699

Issue Date: 1 June 2002

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I. Arfaoui
Commissariat à l'Energie Atomique, Service d'Etudes des Accelerateurs, Centre d'Etudes de Saclay, F-91191 Gif sur Yvette, France
Commissariat à l'Energie Atomique, Service de Physique et Chimie des Surfaces et Interfaces, Centre d'Etudes de Saclay, F-91191 Gif sur Yvette, France


C. Guillot and J. Cousty
Commissariat à l'Energie Atomique, Service de Physique et Chimie des Surfaces et Interfaces, Centre d'Etudes de Saclay, F-91191 Gif sur Yvette, France

C. Antoine
Commissariat à l'Energie Atomique, Service d'Etudes des Accelerateurs, Centre d'Etudes de Saclay, F-91191 Gif sur Yvette, France
The oxide/metal interface induced by surface segregation of oxygen during the annealing of a Nb single crystal in UHV has been studied by photoemission spectroscopy with synchrotron radiation. With 260 and 350 eV photons, four well-resolved peaks A, B, C, D are found in spectra within the 200–210 eV range of binding energy. One couple of peaks (A and C) is associated with 3d5/2 and 3d3/2 core levels of Nb atoms in the metal while the other one (B and D), shifted by 1.4 eV when compared to A and C, corresponds to 3d levels of oxidized Nb atoms. The metal peak A at 202.3 eV is formed by three 3d5/2 components: a peak due to a metallic state (202.1 eV) and two components shifted by 0.2 and 0.5 eV, which are attributed to Nb6O and Nb4O compounds due to interstitial atoms of oxygen, respectively. The estimated concentration of the interstitial oxygen atoms in the nanometer-thick metal skin underlying the NbO/Nb interface corresponds to a large enrichment when compared to the one in the Nb bulk. ©2002 American Institute of Physics.
History: Received 3 July 2001; accepted 5 March 2002
Permalink: http://link.aip.org/link/?JAPIAU/91/9319/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.Dv
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Composition, segregation; defects and impurities
  • 68.35.Ct
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Interface structure and roughness
  • 73.20.Hb
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electron states at surfaces and interfaces Impurity and defect levels; energy states of adsorbed species
  • 79.60.Jv
    Electron and ion emission by liquids and solids; impact phenomena Photoemission and photoelectron spectra Interfaces; heterostructures; nanostructures
  • 61.72.Ji
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
  • 68.37.Xy
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Microscopy of surfaces, interfaces, and thin films Scanning Auger microscopy, photoelectron microscopy
  • 81.40.Gh
    Materials science Treatment of materials and its effects on microstructure and properties Other heat and thermomechanical treatments
  • YEAR: 2002

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ISSN:
0021-8979 (print)   1089-7550 (online)
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