Dominant diffusing species in the growth of amorphous interlayer between Yb metal thin films and crystalline Si
The dominant diffusing species in the formation of an amorphous interlayer between Yb thin films and crystalline Si substrates have been determined by a Mo cluster marker experiment. Metal thin films ...
The dominant diffusing species in the formation of an amorphous interlayer between Yb thin films and crystalline Si substrates have been determined by a Mo cluster marker experiment. Metal thin films ...
Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal–oxide–semiconductor transistors
Direct tunneling gate leakage current in metal–oxide–semiconductor (MOS) structures with ultrathin gate oxides is studied. The effects of inelastic scattering of inversion carriers in the ga...
Direct tunneling gate leakage current in metal–oxide–semiconductor (MOS) structures with ultrathin gate oxides is studied. The effects of inelastic scattering of inversion carriers in the ga...
Calculations of the electronic structure of strained InAs quantum dots in InP
J. Appl. Phys. 92, 932 (2002); doi:10.1063/1.1486021
Issue Date: 15 July 2002
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We have calculated the electronic structure of InAs quantum dots embedded in InP as a function of size, using strain dependent eight-band k·p theory in the envelope function approximation. A realistic three-dimensional shape was used for the simulations and the piezoelectric polarization of the system was included. In order to avoid spurious solutions, an extra term was added to the Hamiltonian. Polarization dependent dipole matrix elements were calculated as well as the exciton binding energies. A comparison between measurements and calculated transition energies shows good agreement. ©2002 American Institute of Physics.
| History: | Received 7 November 2001; accepted 18 April 2002 |
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BibSonomy
KEYWORDS and PACS
indium compounds,
III-V semiconductors,
semiconductor quantum dots,
band structure,
k.p calculations,
internal stresses,
dielectric polarisation,
piezoelectricity,
excitons
- 73.21.La
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems (for electron states in nanoscale materials, see 73.22.-f) Quantum dots - 71.20.Nr
Electronic structure of bulk materials Electron density of states and band structure of crystalline solids Semiconductor compounds - 71.15.-m
Electronic structure of bulk materials Methods of electronic structure calculations - 81.05.Ea
Materials science Specific materials: fabrication, treatment, testing and analysis III–V semiconductors - 77.22.Ej
Dielectrics, piezoelectrics, and ferroelectrics and their properties Dielectric properties of solids and liquids Polarization and depolarization - 77.65.-j
Dielectrics, piezoelectrics, and ferroelectrics and their properties Piezoelectricity and electromechanical effects - 73.20.Mf
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electron states at surfaces and interfaces Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) - 71.35.-y
Electronic structure of bulk materials Excitons and related phenomena - 81.07.Ta
Materials science Nanoscale materials and structures: fabrication and characterization Quantum dots - YEAR: 2002
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PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
REFERENCES (18)
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