Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Dielectric permittivity of SiO2 thin films in dependence on the ambient hydrogen pressure
Metal–silicondioxide–silicon structures with palladium electrodes, instead of standard gold or aluminum electrodes, show an increasing dielectric permittivity of the SiO2 films with increasi...
Next Article
Dielectric properties of Li3VO4 single crystals grown by the Czochralski method
We studied dielectric properties of Li3VO4 single crystals grown by the Czochralski method along the a axis at temperatures ranging from room temperature to 800 °C and frequencies ranging from 100...

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

J. Appl. Phys. 93, 1691 (2003); doi:10.1063/1.1531818

Issue Date: 1 February 2003

You are not logged in to this journal. Log in

Theodosia Gougousi, M. Jason Kelly, David B. Terry, and Gregory N. Parsons
Department of Chemical Engineering, North Carolina State University, Campus Box 7905, Raleigh, North Carolina 27695
In this article, we present data on the properties of La-based high-k dielectric films prepared by oxidation of La deposited by physical vapor deposition on silicon. Films are characterized by x-ray photoelectron spectroscopy, infrared absorption, and capacitance versus voltage analysis. We find that when we oxidize La metal sputter deposited on Si substrates, it reacts with the silicon substrate to form La silicate. La films as thick as 300 Å will react completely with Si under moderate oxidation conditions (900 °C for 10 min) suggesting a very rapid silicidation reaction between La and Si. Under some processing conditions the as-deposited films contain a small La2O3 component that reduces to La silicate upon anneal at high temperatures. La-silicate films do not phase separate into La2O3 and SiO2 upon annealing at 1050 °C, and their resistance to H2O incorporation depends critically on the oxidation temperature. Electrical measurements show a high concentration of positive fixed charge. ©2003 American Institute of Physics.
History: Received 31 July 2002; accepted 31 October 2001
Permalink: http://link.aip.org/link/?JAPIAU/93/1691/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (105 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
  • 77.55.+f
    Dielectric thin films
  • 81.65.Mq
    Surface oxidation
  • 73.40.Qv
    Electrical properties of metal–insulator–semiconductor structures including semiconductor-to-insulator
  • 79.60.Jv
    Photoelectron spectra of interfaces; heterostructures; nanostructures
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • 68.60.Dv
    Thermal stability of thin films; thermal effects
  • 82.80.Gk
    Chemical analytical methods involving vibrational spectroscopy
  • YEAR: 2003

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (30)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. S. I. Association, The International Technology Roadmap for Semiconductors (International SEMATECH Austin, TX, 1999).
  2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001) and references therein.
  3. J.-P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, J. Appl. Phys. 90, 918 (2001).
  4. K. B. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
  5. J. J. Chambers and G. N. Parsons, J. Appl. Phys. 90, 918 (2001).
  6. D. Niu, R. W. Ashcraft, Z. Chen, S. Stemmer, and G. N. Parsons, Appl. Phys. Lett. 81(4), 676 (2002).
  7. H. Yamada, T. Shimizu, and E. Suzuki, Jpn. J. Appl. Phys., Part 2 41, L368 (2002).
  8. M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001).
  9. J. J. Chambers, B. W. Busch, W. H. Schulte, T. Gustafsson, E. Garfunkel, S. Wang, D. M. Maher, T. M. Klein, and G. N. Parsons, Appl. Surf. Sci. 181, 78 (2001).
  10. http://rsb.info.nih.gov/ij/
  11. N. Yang, K. W. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, 1464 (1999).
  12. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Eden Prairie, MN, 1992)
  13. Y. Uwamino, T. Ishizuka, and H. Yamatera, J. Electron Spectrosc. Relat. Phenom. 34, 67 (1984).
  14. C. C. Hsu, J. Ho, J. J. Qian, Y. T. Wang, and Y. X. Wang, Vacuum 41, 1425 (1990).
  15. R. D. Thompson, B. Y. Tsaur, and K. N. Tu, Appl. Phys. Lett. 38, 535 (1991).
  16. H. Ono and T. Katsumata, Appl. Phys. Lett. 78, 1832 (2001).
  17. J. J. Chambers and G. N. Parsons, Appl. Phys. Lett. 77, 2385 (2000).
  18. J. C. Fitzmaurice, A. Hector, T. Rowley, and I. P. Parkin, Polyhedron 13, 235 (1994).
  19. S. Stemmer, J.-P. Maria, and A. I. Kingon, Appl. Phys. Lett. 79, 102 (2001).
  20. C. T. Kirk, Phys. Rev. B 38, 1255 (1988).
  21. F. Petru and A. Muck, Z. Chem. 6, 386 (1966).
  22. M. P. Rosynek and D. T. Magnuson, J. Catal. 46, 402 (1977).
  23. S. Bernal, J. A. Diaz, R. Garcia, and J. M. Rodriguez-Izquierdo, J. Mater. Sci. 20, 537 (1985).
  24. P. Caro and M. Lamaitre Blaise, C. R. Seances Acad. Sci., Ser. C 269, 687 (1969);
    25. P. Caro, J. C. Achard, and O. Pous, Colloq. Int. C. N. R. S. 1, 285 (1970);
    P. E. Caro, J. O. Sawyer, and L. Eyring, Spectrochim. Acta, Part A 28, 1167 (1972).
  25. M. Nieminen, M. Putkonen, and L. Niinistö, Appl. Surf. Sci. 174, 155 (2001).
  26. B. Klingenberg and M. A. Vannice, Chem. Mater. 8, 2755 (1996).
  27. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. 77, 2710 (2000).
  28. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
  29. J. C. Wang, S. H. Chiao, C. L. Lee, T. F. Lei, Y. M. Lin, M. F. Wang, S. C. Chen, C. H. Yu, and M. S. Liang, J. Appl. Phys. 92, 3936 (2002).
  30. M. Houssa, V. V. Afanas'ev, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett. 79, 3134 (2001).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics