Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
   
 
 
 
Previous Article
A computational method of temperature characteristics of magneto-optical Kerr effect in amorphous TbFeCo films with a multilayered structure
A computational method for evaluating temperature characteristics of the Kerr rotation angle, Kerr ellipticity, and thus the readout signal-to-noise ratio of an amorphous TbFeCo film with a multilayer...
Next Article
Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer
Quasi-single-domain 3C-SiC films have been successfully grown on nominally on-axis Si(001) substrate. The starting surface is either of 2×1 quasi-single-domain or of 2×1+1×2 double-d...

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

J. Appl. Phys. 93, 5274 (2003); doi:10.1063/1.1565511

Issue Date: 1 May 2003

You are not logged in to this journal. Log in

Muhammad B. Haider, Costel Constantin, Hamad Al-Brithen, Haiqiang Yang, Eugen Trifan, David Ingram, and Arthur R. Smith
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701

C. V. Kelly and Y. Ijiri
Department of Physics and Astronomy, Oberlin College, Oberlin, Ohio 44074
The effect of the Ga/N flux ratio on the Mn incorporation, surface morphology, and lattice polarity during growth by rf molecular beam epitaxy of (Ga,Mn)N at a sample temperature of 550 °C is presented. Three regimes of growth, N-rich, metal-rich, and Ga-rich, are clearly distinguished by reflection high-energy electron diffraction and atomic force microscopy. Using energy dispersive x-ray spectroscopy, it is found that Mn incorporation occurs only for N-rich and metal-rich conditions. For these conditions, although x-ray diffraction in third order does not reveal any significant peak splitting or broadening, Rutherford backscattering clearly shows that Mn is not only incorporated but also substitutional on the Ga sites. Hence, we conclude that a MnxGa1–xN alloy is formed (in this case x~5%), but there is no observable change in the c-axis lattice constant. We also find that the surface morphology is dramatically improved when growth is just slightly metal rich. When growth is highly metal-rich, but not Ga-rich, we find that Ga polarity flips to N polarity. It is concluded that the optimal growth of Ga-polar MnGaN by rf N-plasma molecular beam epitaxy occurs in the slightly metal-rich regime. ©2003 American Institute of Physics.
History: Received 25 September 2002; accepted 13 February 2003
Permalink: http://link.aip.org/link/?JAPIAU/93/5274/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (522 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.55.Nq
    Thin film composition and phase identification
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 82.80.Yc
    Rutherford backscattering (RBS), and other methods of chemical analysis
  • YEAR: 2003

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (27)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
  2. H. Yang, H. Al-Brithen, E. Trifan, D. C. Ingram, and A. R. Smith, J. Appl. Phys. 91, 1053 (2002).
  3. B. K. Rao and P. Jena, Phys. Rev. Lett. 89, 185504 (2002).
  4. E. Kulatov, H. Nakayama, H. Mariette, H. Ohta, and Y. A. Uspenskii, Phys. Rev. B 66, 045203 (2002).
  5. L. Kronik, M. Jain, and J. R. Chelikowsky, Phys. Rev. B 66, 041203(R) (2002).
  6. S. Kuwabara, K. Ishii, S. Haneda, T. Kondo, and H. Munekata, Physica E (Amsterdam) 10, 233 (2001).
  7. M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, T. Szyszko, and S. Podsiadlo, Appl. Phys. Lett. 79, 2432 (2001).
  8. M. Zajac, R. Doradzinski, J. Gosk, J. Szczytko, M. Lefeld-Sosnowska, M. Kaminska, A. Twardowski, M. Palczewska, E. Grzanka, and W. Gebicki, Appl. Phys. Lett. 78, 1276 (2001).
  9. S. Kuwabara, T. Kondo, T. Chikyow, P. Ahmet, and H. Munekata, Jpn. J. Appl. Phys., Part 2 40, L724 (2001).
  10. M. E. Overberg, C. R. Abernathy, S. J. Pearton, N. A. Theodoropoulou, K. T. McCarthy, and A. F. Hebard, Appl. Phys. Lett. 79, 1312 (2001).
  11. G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, and F. Ren, Appl. Phys. Lett. 80, 3964 (2002).
  12. Y. Cui and L. Li, Appl. Phys. Lett. 80, 4139 (2002).
  13. S. Sonoda, S. Shimizu, T. Sasaki, Y. Yamamoto, and H. Hori, J. Cryst. Growth 237, 1358 (2002).
  14. S. Sonoda, H. Hori, Y. Yamamoto, T. Sasaki, M. Sato, S. Shimizu, K.-I. Suga, and K. Kindo, IEEE Trans. Magn. 38, 2859 (2002).
  15. R. Held, D. E. Crawford, A. M. Johnson, A. M. Dabiran, and P. I. Cohen, J. Electron. Mater. 26, 272 (1997);
    16. R. A. Held, G. Nowak, B. E. Ishaug, S. M. Seutter, A. Parkhomovsky, A. M. Dabiran, P. I. Cohen, I. Grzegory, and S. Porowski, J. Appl. Phys. 85, 7697 (1999).
  16. E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 82, 5472 (1997).
  17. R. M. Feenstra, H. Chen, V. Ramachandran, C. D. Lee, A. R. Smith, J. E. Northrup, T. Zyweitz, J. Neugebauer, and D. W. Greve, Surf. Rev. Lett. 7, 601 (2000).
  18. T. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998).
  19. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Surf. Sci. 423, 70 (1999).
  20. J. E. Northrup, J. Neugebauer, R. M. Feenstra, and A. R. Smith, Phys. Rev. B 61, 9932 (2000).
  21. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998).
  22. V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 75, 808 (1999).
  23. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 334 (1985).
  24. National Compound Semiconductor Roadmap, http://ncsr.csci-va.com
  25. K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002).
  26. M. Tanaka, J. P. Harbison, T. Sands, B. Philips, T. L. Cheeks, J. De Boeck, L. T. Florez, and V. G. Keramidas, Appl. Phys. Lett. 63, 696 (1993).
  27. K.-M. Ching, W.-D. Chang, and T.-S. Chin, Appl. Surf. Sci. 92, 471 (1996).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics