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Synthesis of GaNxAs1–x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

J. Appl. Phys. 94, 1043 (2003); doi:10.1063/1.1582393

Issue Date: 15 July 2003

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K. M. Yu and W. Walukiewicz
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. A. Scarpulla and O. D. Dubon
Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Material Science and Engineering, University of California, Berkeley, California 94720

J. Wu, J. Jasinski, Z. Liliental-Weber, and J. W. Beeman
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. R. Pillai and M. J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
We present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1–x using N+-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaNxAs1–x with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N+ implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaNxAs1–x films are discussed. ©2003 American Institute of Physics.
History: Received 14 March 2003; accepted 22 April 2003
Permalink: http://link.aip.org/link/?JAPIAU/94/1043/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • 61.80.Ba
    Ultraviolet, visible, and infrared radiation effects including laser radiation
  • 61.72.Vv
    Doping and impurity implantation in III–V and II–VI semiconductors
  • 64.70.Dv
    Solid–liquid transitions
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 78.66.Fd
    Optical properties of III–V semiconductors (thin films)
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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