Optical properties of molecular beam epitaxy-grown Zn1–xMnxTe thin films measured by complementary techniques
By using a combination of prism coupler, reflectivity, and spectroscopic ellipsometry techniques, we have determined the dielectric function of a series of molecular beam epitaxy-grown Zn1–xMnxTe...
By using a combination of prism coupler, reflectivity, and spectroscopic ellipsometry techniques, we have determined the dielectric function of a series of molecular beam epitaxy-grown Zn1–xMnxTe...
Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity
Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interf...
Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interf...
High quality type II InAs/GaSb superlattices with cutoff wavelength ~3.7 µm using interface engineering
J. Appl. Phys. 94, 4720 (2003); doi:10.1063/1.1606506
Issue Date: 1 October 2003
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We report the most recent advance in the area of type II InAs/GaSb superlattices that have cutoff wavelength of ~3.7 µm. With GaxIn1–x type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ~4.5 meV using an Ar+ ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T1 = 245 K at sample temperatures below 160 K with fluent power of 70 mW, and T1 = 203 K for sample temperatures above 180 K with fluent power of 70 and 420 mW. ©2003 American Institute of Physics.
| History: | Received 2 June 2003; accepted 17 July 2003 |
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http://link.aip.org/link/?JAPIAU/94/4720/1 |
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Connotea
CiteULike
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BibSonomy
KEYWORDS and PACS
indium compounds,
gallium compounds,
III-V semiconductors,
semiconductor superlattices,
photoluminescence,
X-ray diffraction,
transmission electron microscopy,
atomic force microscopy
- 68.65.Cd
Superlattices (structure and nonelectronic properties) - 78.67.Pt
Optical properties of multilayers and superlattices - 78.55.Cr
Photoluminescence in III–V semiconductors - 68.37.Lp
Transmission electron microscopy (TEM) of surfaces, interfaces and thin films including STEM, HRTEM, etc - 68.37.Ps
Atomic force microscopy (AFM) of surfaces, interfaces and thin films - YEAR: 2003
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
REFERENCES (10)
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- J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, Appl. Phys. Lett. 67, 757 (1995).
- R. Q. Yang,
Microelectron. Eng. 30, 1043 (1999) . - J. Schmitz, J. Wagner, F. Fuchs, N. Herres, P. Koidl, and J. D. Ralston,
J. Cryst. Growth 150, 858 (1995) . - Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, Appl. Phys. Lett. 81, 3675 (2002).
- Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, Appl. Phys. Lett. 80, 3262 (2002).
- P. S. Dutta, K. S. Sangunni, H. L. Bhat, and V. Kumar, Appl. Phys. Lett. 65, 1695 (1994).
- X. Y. Gong, T. Yamaguchi, H. Kan, T. Makino, K. Ohshimo, M. Aoyama, M. Kumagawa, N. L. Rowell, and R. Rinfret,
Appl. Surf. Sci. 113/114, 388 (1997) . - A. P. Ongstad, R. Kaspi, C. E. Moeller, M. L. Tilton, D. M. Gianardi, J. R. Chavez, and G. C. Dente, J. Appl. Phys. 89, 2185 (2001).
- M. Razeghi, MOCVD Challenge (Institute of Physics, Bristol, UK, 1995), Vol. I.
- C. L. Canedy, W. W. Bewley, C. S. Kim, M. Kim, I. Vurgaftman, and J. R. Meyer, J. Appl. Phys. 94, 1347 (2003).
