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Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species

J. Appl. Phys. 95, 1391 (2004); doi:10.1063/1.1636513

Issue Date: 1 February 2004

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Theodosia Gougousi and Gregory N. Parsons
Department of Chemical Engineering, North Carolina State University, Raleigh, North Carolina 27695
The room temperature reactivity of group III and IV based high-dielectric-constant films during long-term (>1 year) exposure to ambient atmosphere (H2O- and C-containing species such as CO2) has been studied in order to assess the stability of the materials. We prepare the films by physical vapor deposition of metal on Si (100) surfaces which is followed by oxidation in N2O (1 atm), and monitor the formation of carbonate/alkoxylate and hydroxide species using Fourier transform infrared spectroscopy. For La-based films we find that the oxidation temperature has a strong effect on the reactivity with the ambient. For Hf- and Zr-based films, formation of various carbonate or alkoxylate species is confirmed within minutes of exposure, while substantial reaction with H2O is not detected. Hf-based films, in general exhibit superior stability upon long-term exposure. ©2004 American Institute of Physics.
History: Received 12 May 2003; accepted 4 November 2003
Permalink: http://link.aip.org/link/?JAPIAU/95/1391/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Kk
    Vapor phase epitaxy; growth from vapor phase
  • 77.55.+f
    Dielectric thin films
  • 81.05.Bx
    Metals, semimetals, and alloys: fabrication, treatment, testing and analysis
  • 78.30.Hv
    Infrared and Raman spectra in nonmetallic inorganics excluding elemental, II-VI and III-V semiconductors and fullerenes
  • 81.65.Mq
    Surface oxidation
  • 78.66.Nk
    Optical properties of insulators (thin films)
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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