Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
   
 
 
 
Previous Article
Understanding degradation and breakdown of SiO2 gate dielectric with "negative Hubbard U" dangling bonds
Degradation and time dependent breakdown of SiO2 gate oxides are discussed based on the Anderson–Mott theory of amorphous solids with dangling bonds as diamagnetic "negative Hubbard U" ...
Next Article
Annealing-induced-type conversion of GaInNAs
When grown by metalorganic chemical vapor deposition (MOCVD), nominally undoped GaInNAs is commonly observed to have an acceptor concentration of ~1017 cm–3. However, after annealing in the MOCVD...

Radiative and nonradiative processes in strain-free AlxGa1–xN films studied by time-resolved photoluminescence and positron annihilation techniques

J. Appl. Phys. 95, 2495 (2004); doi:10.1063/1.1644041

Issue Date: 1 March 2004

You are not logged in to this journal. Log in

Takeyoshi Onuma, Shigefusa F. Chichibu, and Akira Uedono
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Aoba, Sendai, Miyagi 980-0845, Japan
NICP, ERATO, Japan Science and Technology Agency, 2-4-6 Fujimi, Chiyoda, Tokyo 102-0071, Japan

Takayuki Sota
Department of Electrical, Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan

Pablo Cantu, Thomas M. Katona, John F. Keading, Stacia Keller, Umesh K. Mishra, Shuji Nakamura, and Steven P. DenBaars
Materials and Electrical & Computer Engineering Departments, University of California, Santa Barbara, CA 93106
NICP, ERATO, Japan Science and Technology Agency, 2-4-6 Fujimi, Chiyoda, Tokyo 102-0071, Japan
Radiative and nonradiative processes in nearly strain-free AlxGa1–xN alloys were studied by means of steady-state and time-resolved (TR) photoluminescence (PL) spectroscopy, and the results were connected with that of positron annihilation measurement. The results of steady-state optical reflectance and PL measurements gave the bowing parameter b of approximately –0.82 eV. Values of the full width at half maximum (FWHM) of the near-band-edge PL peak nearly agreed with those predicted by the classical alloy broadening model. However, the Stokes-type shifts (SS) were as large as 100–250 meV and both SS and FWHM of the PL increased with the increase in x for x<=0.7. Simultaneously, the luminescence redshift due to the increase in temperature T from 8 to 300 K decreased with increasing x and approached zero for x = 0.5. These results indicated the presence of compositional fluctuation forming weakly bound states in the alloys, and the localized excitons tended to delocalize with the increase in T. The TRPL signals showed a biexponential decay at low temperature, and the slower component became longer with the increase in x (over 40 ns for x=0.49). Simultaneously, density or size of cation vacancies (VIII) and relative intensity of the deep-level emission over that of the near-band-edge one at 300 K increased as x increased to x = 0.7. Consequently, certain trapping mechanisms associated with VIII where suggested, and excitons were then detrapped and transferred to the localized states before the radiative decay at low temperature; the increase in the slower lifetime and its dominance over the entire TRPL signal intensity with increasing x may reflect the increase of the depth and concentration of the trapping level. As the temperature was increased, the TRPL signal became single exponential due to the increasing dominance of nonradiative recombination processes in the free states, resulting in lower internal quantum efficiency (etaint) with increasing x for x<=0.7. Therefore, realization of AlGaN-based efficient deep-UV light emitters requires further reduction of the nonradiative defect density as well as the VIII-related trap density. ©2004 American Institute of Physics.
History: Received 23 June 2003; accepted 3 December 2003
Permalink: http://link.aip.org/link/?JAPIAU/95/2495/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (242 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 78.66.Fd
    Optical properties of III–V semiconductors (thin films)
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • 78.47.+p
    Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
  • 78.70.Bj
    Positron annihilation (condensed matter)
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 71.55.Jv
    Localization in disordered structures including amorphous and glassy solids
  • YEAR: 2004

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (61)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenbergm, and S. L. Gilbert, J. Appl. Phys. 44, 292 (1973).
  2. T. Inushima, V. V. Mamutin, V. A. Vekshim, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227–228, 481 (2001).
  3. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
  4. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
  5. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
  6. For example, see S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997) and Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, edited by S. Nakamura and S. F. Chichibu (Taylor and Francis, London, 2000).
  7. I. Akasaki and H. Amano, Jpn. J. Appl. Phys., Part 1 36, 5393 (1997).
  8. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 38, 3976 (1999).
  9. S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho, and T. Mukai, Jpn. J. Appl. Phys., Part 2 39, L647 (2000).
  10. B. Monemar, Phys. Rev. B 10, 676 (1974).
  11. T. J. Schmidt, Y. H. Cho, J. J. Song, and W. Yang, Appl. Phys. Lett. 74, 245 (1999).
  12. H. Amano and I. Akasaki, J. Phys.: Condens. Matter 13, 9635 (2001);
    13. M. Iwaya, S. Terao, T. Sano, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano, and I. Akasaki, J. Cryst. Growth 237–239, 951 (2002);
    S. Mochizuki, T. Detchprohm, S. Sano, T. Nakamura, H. Amano, and I. Akasaki, ibid. 237–239, 1065 (2002).
  13. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L177 (1997).
  14. T. J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, and H. Morkoc, Appl. Phys. Lett. 74, 3353 (1999).
  15. H. Jiang, G. Y. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, and M. Umeno, J. Appl. Phys. 89, 1046 (2001).
  16. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540 (1987).
  17. D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Höpler, R. Dimitrov, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 82, 5090 (1997).
  18. W. Shan, J. W. Ager III, K. M. Yu, W. Walukiewicz, E. E. Haller, M. C. Martin, W. R. McKinney, and W. Yang, J. Appl. Phys. 85, 8505 (1999).
  19. M. Holtz, T. Prokofyeva, M. Seon, K. Copeland, J. Vanbuskirk, S. Williams, S. A. Nikishin, V. Tretyakov, and H. Temkin, J. Appl. Phys. 89, 7977 (2001).
  20. J. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435 (1998).
  21. F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998);
    22. Phys. Status Solidi B 216, 391 (1999).
  22. G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, and I. Akasaki, Appl. Phys. Lett. 74, 2456 (1999);
    23. B. K. Meyer, G. Steude, A. Göldner, A. Hoffmann, H. Amano, and I. Akasaki, Phys. Status Solidi B 216, 187 (1999).
  23. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 78, 1829 (2001);
    24. 80, 2907 (2002).
  24. E. F. Schubert, E. O. Göbel, Y. Horikoshi, K. Ploog, and H. J. Queisser, Phys. Rev. B 30, 813 (1984).
  25. G. Steude, D. M. Hofmann, B. K. Meyer, H. Amano, and I. Akasaki, Phys. Status Solidi A 165, R3 (1998).
  26. Y. H. Cho, G. H. Gainer, J. B. Lam, J. J. Song, W. Yang, and W. Jhe, Phys. Rev. B 61, 7203 (2000).
  27. H. S. Kim, R. A. Mair, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 76, 1252 (2000).
  28. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 50, 8067 (1994);
    29. Appl. Phys. Lett. 69, 503 (1996).
  29. K. Saarinen, T. Laine, S. Kuisma, J. Nissilä, P. Hautojärvi, L. Dobrzynski, J. M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. Lett. 79, 3030 (1997).
  30. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors, Solid-State Sciences, Vol. 127 (Springer, Berlin, 1999).
  31. T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, and H. Koinuma, Appl. Phys. Lett. 82, 532 (2003).
  32. P. Cantu, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 82, 3683 (2003).
  33. R. Krause-Rehberg, H. S. Leipner, T. Abgarjan, and A. Polity, Appl. Phys. A: Mater. Sci. Process. 66, 599 (1998).
  34. S. Brunner, W. Puff, A. G. Balogh, and P. Mascher, Mater. Sci. Forum 363, 141 (2001).
  35. A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, and S. Nakamura, J. Appl. Phys. 90, 181 (2001).
  36. A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. F. Chichibu, and H. Koinuma, J. Appl. Phys. 93, 2481 (2003).
  37. A. van Veen, H. Schut, J. de Vries, R. A. Hakvoort, and M. R. Ijpma, AIP Conf. Proc. 218, 171 (1990).
  38. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, J. Appl. Phys. 79, 2784 (1996).
  39. T. Onuma, S. F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata, and M. Tanaka, Appl. Phys. Lett. 81, 652 (2002).
  40. D. E. Aspnes, Surf. Sci. 37, 418 (1973).
  41. S. F. Chichibu, K. Torii, T. Deguchi, T. Sota, A. Setoguchi, H. Nakanishi, T. Azuhata, and S. Nakamura, Appl. Phys. Lett. 76, 1576 (2000).
  42. K. Shimada, T. Sota, and K. Suzuki, J. Appl. Phys. 84, 4951 (1998).
  43. M. Leszczynski, T. Suski, P. Perlin, H. Teisseyre, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, and J. Major, J. Phys. D 28, A149 (1995).
  44. I. Akasaki and H. Hashimoto, Solid State Commun. 5, 851 (1967).
  45. T. Azuhata, T. Sota, K. Suzuki, and S. Nakamura, J. Phys.: Condens. Matter 7, L129 (1995).
  46. M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 8132 (1995).
  47. C. Gourdon and P. Lavallard, Phys. Status Solidi B 153, 641 (1989).
  48. V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, Phys. Rev. B 58, 12 899 (1998).
  49. B. Gil, P. Lefebvre, J. Allegre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, P. Bigenwald, and P. Christol, Phys. Rev. B 59, 10 246 (1999).
  50. S. Chichibu, A. Abare, M. Minsky, S. Keller, S. Fleischer, J. Bowers, E. Hu, U. Mishra, L. Coldren, S. DenBaars, and T. Sota, Appl. Phys. Lett. 73, 2006 (1998);
    51. S. Chichibu, A. Abare, M. Mack, M. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. Fleischer, S. Keller, J. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura, Mater. Sci. Eng., B 59, 298 (1999).
  51. S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, J. Appl. Phys. 93, 2051 (2003).
  52. S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, J. Vac. Sci. Technol. B 21, 1856 (2003).
  53. M. Minsky, S. Watanabe, and N. Yamada, J. Appl. Phys. 91, 5176 (2002).
  54. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
  55. T. Onuma, S. F. Chichibu, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, and I. Akasaki, J. Appl. Phys. 94, 2449 (2003).
  56. S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura, Appl. Phys. Lett. 74, 1460 (1999).
  57. S. Dannefaer, W. Puff, and D. Kerr, Phys. Rev. B 55, 2182 (1997).
  58. K. Shiojima, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 77, 4353 (2000);
    59. K. Shiojima and S. Sakai, Institute of Pure and Applied Physics Conf. Series 1, 829 (2000).
  59. C. Wetzel, T. Suski, J. W. Ager III, E. R. Weber, E. E. Haller, S. Fisher, B. Meyer, R. Molnar, and P. Perlin, Phys. Rev. Lett. 78, 3923 (1997).
  60. M. D. McCluskey, N. M. Johnson, C. G. Van de Walle, D. P. Bour, M. Kneissl, and W. Walukiewicz, Phys. Rev. Lett. 80, 4008 (1998).
  61. C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 74, 3833 (1999).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics