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Synthesis and optical properties of II-O-VI highly mismatched alloys

J. Appl. Phys. 95, 6232 (2004); doi:10.1063/1.1713021

Issue Date: 1 June 2004

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K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, and J. W. Beeman
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. A. Scarpulla and O. D. Dubon
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Engineering, University of California, Berkeley, California 94720

P. Becla
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
We have synthesized ternary and quaternary diluted II-VI oxides using the combination of O ion implantation and pulsed laser melting. CdOxTe1–x thin films with x up to 0.015, and the energy gap reduced by 150 meV were formed by O+-implantation in CdTe followed by pulsed laser melting. Quaternary Cd0.6Mn0.4OxTe1–x and Zn0.88Mn0.12OxTe1–x with mole fraction of incorporated O as high as 0.03 were also formed. The enhanced O incorporation in Mn-containing alloys is believed to be due to the formation of relatively strong Mn-O bonds. Optical transitions associated with the lower (E–) and upper (E+) conduction subbands resulting from the anticrossing interaction between the localized O states and the extended conduction states of the host are clearly observed in these quaternary diluted II-VI oxides. These alloys fulfill the criteria for a multiband semiconductor that has been proposed as a material for making high efficiency, single-junction solar cells. ©2004 American Institute of Physics.
History: Received 21 January 2004; accepted 1 March 2004
Permalink: http://link.aip.org/link/?JAPIAU/95/6232/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.66.Hf
    Optical properties of II–VI semiconductors (thin films)
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 61.72.Vv
    Doping and impurity implantation in III–V and II–VI semiconductors
  • 61.80.Ba
    Ultraviolet, visible, and infrared radiation effects including laser radiation
  • 64.70.Dv
    Solid–liquid transitions
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 78.20.Ci
    Optical constants including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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