X-ray-absorption fine-structure study of ZnSexTe1–x alloys
X-ray-absorption fine-structure experiments at different temperatures in ZnSexTe1–x (x = 0, 0.1, 0.2, 0.55, 0.81, 0.93, 0.99, and 1.0) have been performed in order to obtain information about the...
X-ray-absorption fine-structure experiments at different temperatures in ZnSexTe1–x (x = 0, 0.1, 0.2, 0.55, 0.81, 0.93, 0.99, and 1.0) have been performed in order to obtain information about the...
Electronic structure and magnetic properties of MnFe3N
The electronic structure and magnetic properties of MnFe3N have been studied using the full potential–linearized augmented plane-wave method and the generalized gradient corrections. The stabilit...
The electronic structure and magnetic properties of MnFe3N have been studied using the full potential–linearized augmented plane-wave method and the generalized gradient corrections. The stabilit...
Hot-phonon-induced velocity saturation in GaN
J. Appl. Phys. 96, 1499 (2004); doi:10.1063/1.1762999
Issue Date: 1 August 2004
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In highly polar semiconductors with electron densities typically found in heterostructure field-effect transistors (HFETs), transport cannot be described without taking hot phonons into account. Here we describe a simple analytical model applied to the case of bulk GaN, taking the nonparabolicity of the conduction band into account, and show that the production of longitudinal optical (LO) phonons reduces the mobility and causes the drift velocity to saturate at a value around 107 cm/s, depending on the density of electrons. Transfer of electrons to higher valleys is expected to be delayed to much higher fields than commonly predicted. The effect of possible hot products of the LO decay is also considered. We relate the results for bulk material to the situation in HFETs, in which real-space transfer is inhibited, by considering the effect of spatial spreading of the channel electrons. ©2004 American Institute of Physics.
| History: | Received 9 March 2004; accepted 23 April 2004 |
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http://link.aip.org/link/?JAPIAU/96/1499/1 |
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BibSonomy
KEYWORDS and PACS
gallium compounds,
III-V semiconductors,
wide band gap semiconductors,
polar semiconductors,
conduction bands,
electron density,
phonons,
field effect transistors,
semiconductor device models,
hot carriers
- 85.30.Tv
Semiconductor field effect devices - 85.30.De
Semiconductor-device characterization, design, and modeling - 63.20.-e
Phonons in crystal lattices - 72.20.Ht
High-field transport and nonlinear effects (semiconductors/insulators) - 71.20.Nr
Electronic structure of crystalline semiconductor compounds - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
REFERENCES (14)
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