Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Crystallization and Properties of PbO-doped Ba0.7Sr0.3TiO3 Films
Ferroelectric Ba0.7Sr0.3TiO3 films were fabricated using a PbO-doped barium strontium titanate sol-gel precursor. Ba0.7Sr0.3TiO3 thin films with 0, 10, 20, and 30  at.%PbO doping were deposi...
Next Article
Elastica solution for a nanotube formed by self-adhesion of a folded thin film
Schmidt and Eberl demonstrated the construction of tubes with submicron diameters by the method of folding thin solid films [Nature (London)NATUAS 410, 168 (2001)]. In their method, a thin film is fol...

Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires

J. Appl. Phys. 96, 3424 (2004); doi:10.1063/1.1774257

Issue Date: 15 September 2004

You are not logged in to this journal. Log in

Y. W. Heo, C. Abernathy, K. Pruessner, W. Sigmund, and D. P. Norton
Department of Materials Science and Engineering, University of Florida, P.O.Box 116400, Rhines Hall, Gainesville, Florida 32606

M. Overberg
Sandia National Laboratory, P.O. Box 5800, Albuquerque, New Mexico 87185-0603

F. Ren
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32606

M. F. Chisholm
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831
The synthesis, structure, and optical properties of one-dimensional heteroepitaxial cored (Zn,Mg)O semiconductor nanowires grown by a catalyst-driven molecular beam epitaxy technique are discussed. The structures form spontaneously in a Zn, Mg and O2/O3 flux, consisting of a single crystal, Zn-rich Zn1–xMgxO(x<0.02) core encased by an epitaxial Zn1–yMgyO(y>>0.02) sheath. High resolution Z-contrast scanning transmission electron microscopy shows core diameters as small as 4  nm. The cored structure forms spontaneously under constant flux due to a bimodal growth mechanism in which the core forms via bulk like vapor-liquid-solid growth, while the outer sheath grows as a heteroepitaxial layer. Temperature-dependent photoluminescence shows a slight blueshift in the near band edge peak, which is attributed to a few percent Mg doping in the nanoscale ZnO core. The catalyst-driven molecular beam epitaxy technique provides for site-specific nanorod growth on arbitrary substrates. ©2004 American Institute of Physics
History: Received 3 November 2003; accepted 31 May 2004
Permalink: http://link.aip.org/link/?JAPIAU/96/3424/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (1106 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 81.05.Dz
    II–VI semiconductors: fabrication, treatment, testing and analysis
  • 61.46.+w
    Structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
  • 68.65.La
    Quantum wires (structure and nonelectronic properties)
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 78.66.Hf
    Optical properties of II–VI semiconductors (thin films)
  • 78.55.Et
    Photoluminescence in II–VI semiconductors
  • 82.65.+r
    Surface and interface chemistry; heterogeneous catalysis at surfaces
  • 68.37.Lp
    Transmission electron microscopy (TEM) of surfaces, interfaces and thin films including STEM, HRTEM, etc
  • 68.37.Vj
    Field emission and field-ion microscopy of surfaces, interfaces and thin films
  • YEAR: 2004

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (31)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. H. Sakaki, J. Cryst. Growth 251, 9 (2003).
  2. Y. Wu and P. Yang, Chem. Mater. 12, 605 (2000).
  3. A. M. Morales and C. M. Lieber, Science 279, 208 (1998).
  4. R. Solanki, J. Hua, J. L. Freeouf, and B. Miner, Appl. Phys. Lett. 81, 3864 (2002).
  5. R. Ragan, C. C. Ahn, and H. A. Atwater, Appl. Phys. Lett. 82, 3439 (2003).
  6. H. Z. Zhang et al., Solid State Commun. 109, 677 (1999).
  7. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. 82, 112 (2003).
  8. J. K. Jian, X. L. Chen, W. J. Wang, L. Dai, and Y. P. Xu, Appl. Phys. A: Mater. Sci. Process. 76, 291 (2003).
  9. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (2001).
  10. F. Capasso, Science 235, 172 (1987).
  11. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
  12. J. U. Kim, and I. V. Krive, and J. M. Kinaret, Phys. Rev. Lett. 90, 176401 (2003).
  13. N. J. Stone and H. Ahmed, Appl. Phys. Lett.73, 2134 (1998).
  14. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001).
  15. C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, and H. J. Lee, Appl. Phys. Lett. 81, 3648 (2002).
  16. M. H. Huang et al., Science 292, 1897 (2001).
  17. J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, and C. M. Lieber, Science 293, 1455 (2001).
  18. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001).
  19. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. (Weinheim, Ger.) 13, 113 (2001).
  20. C. C. Tang, S. S. Fan, M. L. de la Chapelle, and P. Li, Chem. Phys. Lett. 333, 12 (2001).
  21. J. C. Hulteen and C. R. Martin, J. Mater. Chem. 7, 1075 (1997).
  22. Y. W. Heo, V. Varadarajan, M. Kaufman, K. Kim, F. Ren, P. H. Fleming, and D. P. Norton, Appl. Phys. Lett. 81 3046 (2002).
  23. Y.W. Heo, K. Pruessner, W. Sigmund, C. Abernathy, D.P. Norton, M. Overberg, F. Ren, M.F. Chisholm, Appl. Phys. A: Mater. Sci. Process. (submitted).
  24. J. F. Sarver, F. L. Katnack, and F. A. Hummel, J. Electrochem. Soc. 106, 960 (1959).
  25. D. C. Reynolds, C. W. Litton, and T. C. Collins, Phys. Rev. 140, A1726 (1965).
  26. M. Haupt, et al., J. Appl. Phys. 93 6252 (2003).
  27. W. I. Park, Y. H. Jun, S. W. Jung, and G.-C. Yi, Appl. Phys. Lett. 82, 964 (2003).
  28. V. S. Dneprovskii, E. A. Zhukov, N. Yu. Markova, E. A. Mulyarov, K. A. Chernoutsan, and O. A. Shalygina, Phys. Solid State 42, 544 (2000).
  29. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 75, 980 (1999).
  30. M. S. Gudiksen, J. Wang, and C. M. Lieber, J. Phys. Chem. B 106, 2036 (2002).
  31. E. M. Wong and P. C. Searson, Appl. Phys. Lett. 74, 2939 (1999).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics