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Incorporation of manganese into semiconducting ScN using radio frequency molecular beam epitaxy

J. Appl. Phys. 96, 3787 (2004); doi:10.1063/1.1788842

Issue Date: 1 October 2004

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Hamad A. AL-Brithen, Haiqiang Yang, and Arthur R. Smith
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701
The incorporation of manganese into semiconducting ScN, using radio frequency molecular beam epitaxy, has been investigated. X-ray diffraction and reflection high energy electron diffraction measurements show the face-centered tetragonal rocksalt-type crystal structure with Sc and Mn cations and N anions. In addition to the solute incorporation into the lattice, which is clear from the positions of the diffraction peaks, atomic force microscopy images show that the surface of the alloy grown at TS<=518  °C contains dot-like features, indicating surface accumulation. The areal dot density is found to decrease as the growth temperature increases, whereas the Mn incorporation increases at 518 °C. This behavior is suggestive of a thermally activated process, and it is well explained by an Arrhenius law, giving an activation energy (diffusion barrier) of 0.67 eV. Increasing the growth temperature to 612 °C leads to an increased desorption rate, resulting in little Mn incorporation. It has been found that the growth is nearly optimized at TS = 518  °C for high Mn incorporation, smooth growth, and small accumulate density. The alloy is found to have lattice parameters which depend on the Mn/(Mn + Sc) bulk ratio. The alloy lattice constants follow Vegard's law depending on the Mn bulk fraction and the lattice constants of ScN and theta-phase MnN. The Mn incorporation and Mn incorporation coefficient for films grown at TS = 518  °C increase as the Mn/(Mn + Sc) flux ratio increases. ©2004 American Institute of Physics
History: Received 23 March 2004; accepted 12 July 2004
Permalink: http://link.aip.org/link/?JAPIAU/96/3787/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 75.50.Pp
    Magnetic semiconductors
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 61.72.Vv
    Doping and impurity implantation in III–V and II–VI semiconductors
  • 61.72.Ss
    Impurity concentration, distribution, and gradients
  • 68.35.Bs
    Structure of clean solid surfaces (reconstruction)
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • 68.43.Mn
    Adsorption/desorption kinetics
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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