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Influence of composition on the piezoelectric effect and on the conduction band energy levels of InxGa1–xAs/GaAs quantum dots

J. Appl. Phys. 96, 5169 (2004); doi:10.1063/1.1793333

Issue Date: 1 November 2004

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M. A. Migliorato, D. Powell, S. L. Liew, A. G. Cullis, P. Navaretti, M. J. Steer, and M. Hopkinson
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

M. Fearn and J. H. Jefferson
QinetiQ plc, Sensors & Electronics Division, St. Andrews Road, Malvern, Worcs. WR14 3PS, United Kingdom
We address fundamental issues relating to the symmetry of the shape and the nonuniform composition of InGaAs quantum dot islands. Using atomistic simulations in the framework of the Tersoff empirical potential, we study the effect of compositional gradients in the In distribution on the piezoelectric effect in quantum dots. We demonstrate that the internal piezoelectric fields contribute strongly to the experimentally observed optical anisotropies. This is confirmed by accurate high-resolution transmission electron microscopy analysis over hundreds of islands grown in different conditions that reveals the absence of structural anisotropy under our growth conditions. ©2004 American Institute of Physics
History: Received 8 December 2003; accepted 23 July 2004
Permalink: http://link.aip.org/link/?JAPIAU/96/5169/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.84.-s
    Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 68.65.Hb
    Quantum dots (structure and nonelectronic properties)
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 77.65.-j
    Piezoelectricity and electromechanical effects
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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